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UNR4213

Description
Composite Device - Transistors with built-in Resistor
CategoryDiscrete semiconductor    The transistor   
File Size272KB,14 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

UNR4213 Overview

Composite Device - Transistors with built-in Resistor

UNR4213 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionROHS COMPLIANT, NS-B1, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PSIP-T3
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Bismuth/Copper (Sn/Ag/Bi/Cu)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Transistors with built-in Resistor
UNR421x Series
(UN421x Series)
Silicon NPN epitaxial planar type
Unit: mm
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
New S type package, allowing supply with the radial taping
0.75 max.
4.0
±0.2
2.0
±0.2
(0.8)
3.0
±0.2
Resistance by Part Number
UNR4210
UNR4211
UNR4212
UNR4213
UNR4214
UNR4215
UNR4216
UNR4217
UNR4218
UNR4219
UNR421D
UNR421E
UNR421F
UNR421K
UNR421L
(UN4210)
(UN4211)
(UN4212)
(UN4213)
(UN4214)
(UN4215)
(UN4216)
(UN4217)
(UN4218)
(UN4219)
(UN421D)
(UN421E)
(UN421F)
(UN421K)
(UN421L)
(R
1
)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
10 kΩ
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
0.45
+0.20
–0.10
(2.5) (2.5)
0.45
+0.20
–0.10
0.7
±0.1
15.6
±0.5
(0.8)
7.6
2
3
1
1: Emitter
2: Collector
3: Base
NS-B1 Package
Internal Connection
R
1
B
R
2
E
C
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
300
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00020BED
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