FDN335N
20V N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@ 2.5V, Ids@ 1.7A=
70m
Ω
RDS(ON), Vgs@ 2.5V, Ids@ 1.5A=
100m
Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
D
G
SOT-23(PACKAGE)
S
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.40
2.80
1.40
1.60
0.35
0.50
0
0.10
0.45
0.55
REF.
G
H
K
J
L
M
Millimeter
Min.
Max.
1.90 REF.
1.00
1.30
0.10
0.20
0.40
-
0.85
1.15
0°
10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
Maximum Power Dissipation
2)
Symbol
Limit
Unit
V
DS
V
GS
I
D
I
DM
TA = 25
o
TA = 75
o
C
2)
20
±8
1.7
8
1.25
0.8
-55 to 150
100
166
o
V
A
P
D
T
J
, T
stg
R
thJA
W
o
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance (PCB mounted)
C
Junction-to-Ambient Thermal Resistance (PCB mounted)
3)
C/W
Notes
1)
Pulse width limited by maximum junction temperature.
2)
Surface Mounted on FR4 Board, t
v
5 sec.
3)
Surface Mounted on FR4 Board.
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
FDN335N
20V N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current 0
Gate Body Leakage
Forward Transconductance
Dynamic
1)
1)
1)
Symbol
Test Condition
Min.
Typ.
Miax.
Unit
BV
DSS
R
DS(on)
V
GS
= 0V, I
D
= 10uA
V
GS
= 4.5V, I
D
= 1.7A
V
GS
= 2.5V, I
D
= 1.5A
20
55
78
0.4
1
±100
7
70
V
mΩ
100
1.5
V
uA
nA
S
V
GS(th)
I
DSS
I
GSS
g
fs
V
DS
=V
GS
, I
D
= 50uA
V
DS
= 16V, V
GS
= 0V
V
GS
= ± 8V, V
DS
= 0V
V
DS
= 5V, I
D
= 1.5A
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
1)
Q
g
V
DS
= 10V, I
D
= 3.6A
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
V
DS
= 10V, V = 0V
GS
C
oss
f = 1.0 MHz
C
rss
I
D
^
3.6A,V
GEN
= 4.5V
R
G
= 6
Ω
V
DD
= 10V, RL=5.5
Ω
V
GS
= 4.5V
5.4
0.65
1.6
12
36
34
10
340
115
33
10
nC
25
60
ns
60
25
pF
I
S
V
SD
I
S
= 1.6A, V
GS
0.6
A
V
= 0V
1.2
Pulse test: pulse width <= 300us, duty cycle<= 2%
２
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
FDN335N
20V N-Channel Enhancement Mode MOSFET
10
Output Characteristics
V
GS
= 5 thru 2.5 V
10
Transfer Characteristics
8
I D – Drain Current (A)
I D – Drain Current (A)
2V
6
8
6
4
4
T
C
= 125_C
2
0, 0.5, 1 V
1.5 V
2
25_C
–55_C
0
0
1
2
3
4
5
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.15
1000
Capacitance
r DS(on)– On-Resistance (
W
)
0.12
V
GS
= 2.5 V
0.09
V
GS
= 4.5 V
0.06
C – Capacitance (pF)
800
600
400
C
iss
0.03
200
C
rss
C
oss
0
0
2
4
6
8
10
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
5
V
DS
= 10 V
I
D
= 3.6 A
V GS – Gate-to-Source Voltage (V)
Gate Charge
1.8
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 3.6 A
r DS(on)– On-Resistance (
W
)
(Normalized)
0
1
2
3
4
5
6
7
4
1.6
1.4
3
1.2
2
1.0
1
0.8
0
0.6
–50
0
50
100
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
３
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
FDN335N
20V N-Channel Enhancement Mode MOSFET
Source-Drain Diode Forward Voltage
10
0.20
On-Resistance vs. Gate-to-Source Voltage
r DS(on)– On-Resistance (
W
)
0.16
I S – Source Current (A)
T
J
= 150_C
0.12
I
D
= 3.6 A
0.08
T
J
= 25_C
0.04
1
0.2
0.4
0.6
0.8
1.0
1.2
0
0
2
4
6
8
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.2
14
12
10
Power (W)
8
6
4
–0.3
2
0
0
50
T
J
– Temperature (_C)
100
150
0.01
Single Pulse Power
0.1
V GS(th) Variance (V)
–0.0
I
D
= 250
mA
–0.1
T
C
= 25_C
Single Pulse
–0.2
–0.4
–50
0.10
1.00
Time (sec)
10.00
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
30
Square Wave Pulse Duration (sec)
４
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
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