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FM24C04B

Description
SPECIALTY MEMORY CIRCUIT, PDSO8
Categorystorage   
File Size284KB,12 Pages
ManufacturerCypress Semiconductor
Download Datasheet Parametric View All

FM24C04B Overview

SPECIALTY MEMORY CIRCUIT, PDSO8

FM24C04B Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage5.5 V
Minimum supply/operating voltage4.5 V
Rated supply voltage5 V
Processing package descriptionGreen, MS-012AA, SOIC-8
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal spacing1.27 mm
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
Temperature levelINDUSTRIAL
memory width8
organize512 × 8
storage density4096 deg
operating modeSynchronize
Number of digits512 words
Number of digits512
Memory IC typememory circuit
FM24C04B
4Kb Serial 5V F-RAM Memory
Features
4K bit Ferroelectric Nonvolatile RAM
Organized as 512 x 8 bits
High Endurance 10
12
Read/Writes
38 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Fast Two-wire Serial Interface
Up to 1 MHz maximum bus frequency
Direct hardware replacement for EEPROM
Supports legacy timing for 100 kHz & 400 kHz
Low Power Operation
5V operation
100
A
Active Current (100 kHz)
4
A
(typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC (-G)
Description
The FM24C04B is a 4-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system level reliability problems caused by EEPROM
and other nonvolatile memories.
The FM24C04B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array in the cycle after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. The FM24C04B is capable of
supporting 10
12
read/write cycles, or a million times
more write cycles than EEPROM.
These capabilities make the FM24C04B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss. The
combination of features allows more frequent data
writing with less overhead for the system.
The FM24C04B provides substantial benefits to users
of serial EEPROM, yet these benefits are available in
a hardware drop-in replacement. The FM24C04B is
available in an industry standard 8-pin SOIC package
and uses a familiar two-wire protocol. The
specifications are guaranteed over the industrial
temperature range from -40°C to +85°C.
Pin Configuration
NC
A1
A2
VSS
1
2
3
4
8
7
6
5
VDD
WP
SCL
SDA
Pin Names
A1-A2
SDA
SCL
WP
VSS
VDD
Function
Device Select Address 1 and 2
Serial Data/Address
Serial Clock
Write Protect
Ground
Supply Voltage
Ordering Information
FM24C04B-G
FM24C04B-GTR
“Green”/RoHS 8-pin SOIC
“Green”/RoHS 8-pin SOIC,
Tape & Reel
This product conforms to specifications per the terms of the Ramtron
standard warranty. The product has completed Ramtron’s internal
qualification testing and has reached production status.
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000
Rev. 3.0
Jan. 2012
www.ramtron.com
Page 1 of 12

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