High Voltage NPN Epitaxial Planar Transistor
FMBT5550 / FMBT5551
List
Formosa MS
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2~3
Rating and characteristic curves........................................................ 4~5
Pinning information........................................................................... 6
Marking........................................................................................... 6
Suggested solder pad layout............................................................. 6
Packing information.......................................................................... 7
Reel packing.................................................................................... 8
Suggested thermal profiles for soldering processes............................. 8
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
8
Page 1
DS-231108
High Voltage NPN Epitaxial Planar Transistor
FMBT5550 / FMBT5551
600mA Silicon NPN Epitaxial Planar
Transistor
Package outline
Formosa MS
SOT-23
0.045 (1.15)
0.034 (0.85)
Features
•
High collector-emitterbreakdien voltage.
0.120 (3.04)
0.110 (2.80)
.084(2.10)
0.020 (0.50)
(C)
.068(1.70)
•
•
•
•
•
0.007 (0.18)
0.051 (1.30)
0.035 (0.89)
Mechanical data
Dimensions in inches and (millimeters)
•
Epoxy:UL94-V0 rated flame retardant
•
Case : Molded plastic, SOT-23
•
Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
•
Mounting Position : Any
•
Weight : Approximated 0.008 gram
Maximum ratings
(AT T =25 C unless otherwise noted)
o
A
PARAMETER
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
CONDITIONS
Symbol FMBT5550
V
CBO
V
CEO
V
EBO
I
C
160
140
6.0
600
0.003 (0.09)
(BV
CEO
= 140V~ 160V@I
C
=1mA)
This device is designed for general purpose high voltage
amplifiers and gas discharge display driving
.
Epitaxial planar die construction
.
Complememntary PNP type available (FMBT5401)
Lead-free parts for green partner, exceeds environmental
standards of MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free part, ex.FMBT5550-H.
(B)
(A)
0.063 (1.60)
0.047 (1.20)
0.108 (2.75)
0.083 (2.10)
0.027 (0.67)
0.013 (0.32)
0.012 (0.30)
FMBT5551
180
160
UNIT
V
dc
V
dc
V
dc
mA
dc
Thermal Characteristics
Characteristics
T = 25
O
C
Total device dissipation FR-5 board
A
(1)
Derate above 25
O
C
Thermal resistance
Total device dissipation alumina
substrate(2)
Thermal resistance
Operating temperature
Storage temperature
1.FR-5 = 1.0 X 0.75 X0.062 in.
2.Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
CONDITIONS
Symbol
P
D
P
D
R
θJA
P
D
P
D
R
θJA
T
J
T
STG
Maximum
225
1.8
556
300
2.4
417
-55 ~ +150
-65 ~ +150
UNIT
mW
mW/ C
O
O
Junction to ambient
T
A
= 25 C
Derate above 25
O
C
Junction to ambient
O
C/W
mW
O
mW/ C
O
C/W
o
C
Document ID
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
8
Page 2
DS-231108
High Voltage NPN Epitaxial Planar Transistor
FMBT5550 / FMBT5551
Characteristics
(AT T =25 C unless otherwise noted)
o
A
Formosa MS
Symbol
V
(BR)CBO
Types
FM5550
FM5551
FM5550
FM5551
Min.
160
180
140
160
6.0
-
-
-
-
-
Max.
-
-
-
-
-
100
50
100
50
50
nA
dc
µA
dc
V
dc
nA
dc
UNIT
V
dc
Off characteristics
PARAMETER
Collector-Base breakdown voltage
CONDITIONS
I
c
= -100µA
dc
, I
E
= 0
Collector-Emitter breakdown voltage(3)
Emitter-Base breakdown voltage
I
c
= 1.0mA
d
c, I
B
= 0
V
(BR)CEO
V
(BR)EBO
V
dc
I
E
= 10µA
dc
, I
C
= 0
V
CB
= 100V
dc
, I
E
= 0
V
CB
= 120V
dc
, I
E
= 0
Both Types
FM5550
I
CBO
FM5551
FM5550
FM5551
I
EBO
Both Types
Collector cutoff current
V
CB
= 100V
dc
, I
E
= 0, T
A
= 100
O
C
V
CB
= 100V
dc
, I
E
= 0, T
A
= 100 C
O
Emitter cutoff current
V
EB
= 4.0V
dc
, I
C
= 0
On characteristics(3)
PARAMETER
CONDITIONS
I
c
= 1.0mA
dc
, V
CE
= 5.0V
dc
DCcurrent gain
Symbol
Types
FM5550
FM5551
FM5550
h
FE
FM5551
FM5550
FM5551
Both Types
Min.
60
80
60
80
20
30
-
-
-
-
-
-
Max.
-
-
250
250
-
-
0.15
0.25
0.20
1.0
1.2
1.0
UNIT
I
c
= 10mA
dc
, V
CE
= 5.0V
dc
-
I
c
= 50mA, V
CE
= 10V
dc
I
c
= 10mA
dc
, I
B
= 1.0mA
dc
Collector-Emitter saturation voltage(3)
I
c
= 50mA
dc
, I
B
= 5.0mA
dc
I
c
= 10mA
dc
, I
B
= 1.0mA
dc
V
BE(sat)
I
c
= 50mA
dc
, I
B
= 5.0mA
dc
3.Pulse test : pukse width < 300uS, duty cycle < 2.0%.
V
CE(sat)
FM5550
FM5551
Both Types
V
dc
Base-Emitter saturation voltage(3)
V
dc
FM5550
FM5551
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
8
Page 3
DS-231108
High Voltage NPN Epitaxial Planar Transistor
FMBT5550 / FMBT5551
Formosa MS
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
8
Page 4
DS-231108
High Voltage NPN Epitaxial Planar Transistor
FMBT5550 / FMBT5551
Formosa MS
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2011/07/21
Revision
C
Page.
8
Page 5
DS-231108
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