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FQPF5N50CFTU

Description
5 A, 500 V, 1.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size654KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FQPF5N50CFTU Overview

5 A, 500 V, 1.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

FQPF5N50CFTU Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconductor
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-220F
package instructionLEAD FREE, TO-220F, 3 PIN
Contacts3
Manufacturer packaging codeTO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresFAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)300 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)5 A
Maximum drain current (ID)5 A
Maximum drain-source on-resistance1.55 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)38 W
Maximum pulsed drain current (IDM)20 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
FQPF5N50CF 500V N-Channel MOSFET
FRFET
FQPF5N50CF
500V N-Channel MOSFET
Features
5A, 500V, R
DS(on)
= 1.55
@V
GS
= 10 V
• Low gate charge ( typical 18nC)
• Low Crss ( typical 15pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TM
Description
These N-Channel enhancement mode power field effect transis-
tors are produced using Fairchild’s proprietary, planar stripe,
DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high effi-
ciency switched mode power supplies, active power factor cor-
rection, electronic lamp ballasts based on half bridge topology.
D
!
G
!
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
Parameter
FQPF5N50CF
500
5
2.9
20
±
30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
5
7.3
4.5
38
0.3
-55 to +150
300
Thermal Characteristics
Symbol
R
θJC
R
θJS
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQPF5N50CF
3.31
--
62.5
Units
°C/W
°C/W
°C/W
©2005 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
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