SEMICONDUCTOR
TECHNICAL DATA
TV TUNING.
FEATURES
High Capacitance Ratio : C2V/C25V=6.5(Typ.)
Low Series Resistance : r
S
=0.4 (Typ.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
2
D
KDV215
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
B
1
G
K
A
H
E
J
C
I
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Reverse Voltage
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
R
V
RM
T
j
T
stg
RATING
30
35 (R
L
=10
125
-55 125
)
UNIT
V
V
M
M
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
MILLIMETERS
_
2.50 + 0.1
_ 0.05
1.25 +
_
0.90 + 0.05
0.30+0.06/-0.04
_
1.70 + 0.05
MIN 0.17
_
0.126 + 0.03
0~0.1
1.0 MAX
_
0.15 + 0.05
_
0.4 + 0.05
2 +4/-2
4~6
1. ANODE
2. CATHODE
USC
Marking
Type Name
VA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Reverse Current
SYMBOL
I
R
I
R
C
2V
C
25V
C
2V
/C
25V
r
S
V
R
=5V, f=470MHz
V
R
=30V
V
R
=30V, (Ta=60
)
V
R
=2V, f=1MHz
V
R
=25V, f=1MHz
TEST CONDITION
MIN.
-
-
14.16
2.11
5.90
-
TYP.
-
-
-
-
6.50
0.4
MAX.
10
nA
100
16.25
pF
2.43
7.15
0.55
-
UNIT
Capacitance
Capacitance Ratio
Series Resistance
Note : Available in matched group for capacitance to 2.5%.
C(Max.)-C(Min.)
0.025
C(Min.)
(V
R
=2~25V)
2005. 12. 7
Revision No : 0
F
L
1/2
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