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KRA313V

Description
VSM PACKAGE
CategoryDiscrete semiconductor    The transistor   
File Size357KB,1 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet Parametric View All

KRA313V Overview

VSM PACKAGE

KRA313V Parametric

Parameter NameAttribute value
MakerKEC
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
SEMICONDUCTOR
MARKING SPECIFICATION
1. Marking method
Laser Marking
KRA313V
VSM PACKAGE
2. Marking
PO
No.
Item
Device Mark
hFE Grade
Marking
PO
-
Description
KRA313V
-
2002. 12. 31
Revision No : 0
1/1

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Index Files: 880  615  1189  2276  485  18  13  24  46  10 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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