SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
High Voltage : V
CEO
=-120V.
Excellent h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
A
L
KTA1517
EPITAXIAL PLANAR PNP TRANSISTOR
E
B
L
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTC3911S.
G
High h
FE
: h
FE
=200 700.
2
3
1
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
C
N
H
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
M
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
RATING
-120
-120
-5
-100
-20
150
150
-55 150
UNIT
V
V
V
mA
mA
mW
1. EMITTER
2. BASE
3. COLLECTOR
K
SOT-23
Marking
h
FE
Rank
Lot No.
Type Name
AC
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
Note : h
FE
Classification
GR(G):200 400
SYMBOL
I
CBO
I
EBO
h
FE
(Note)
V
CE(sat)
f
T
C
ob
NF
TEST CONDITION
V
CB
=-120V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-6V, I
C
=-2mA
I
C
=-10mA, I
B
=-1mA
V
CE
=-6V, I
C
=-1mA
V
CB
=-10V, I
E
=0, f=1MHz
V
CE
=-6V, I
C
=-0.1mA
f=1kHz, Rg=10k
BL(L):350 700
MIN.
-
-
200
-
-
-
-
TYP.
-
-
-
-
100
4.0
1.0
MAX.
-0.1
-0.1
700
-0.3
-
-
10
V
MHz
pF
dB
UNIT
A
A
2006. 2. 16
Revision No : 0
J
D
1/3
KTA1517
h PARAMETER - V
CE
700
500
300
h PARAMETER
COMMON EMITTER
I
E
=1mA
f=270Hz
Ta=25 C
NF - R
g ,
I
C
SIGNAL SOURCE RESISTANCE R
g
(Ω)
100k
COMMON
EMITTER
V
CE
=-6V
f=1kHz
1
10 2
8
h
fe
10k
NF
=1
100
50
30
h
ie
(xkΩ)
dB
2
3
4
6
1k
4
3
NF
2
6
10
12
8
=1
h
o
dB
10
5
-1
-3
-5
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR OUTPUT CAPACITANCE C
ob
(pF)
SIGNAL SOURCE RESISTANCE R
g
(Ω)
100k
10k
1k
100
10
12
10
-10
-100
COLLECTOR CURRENT I
C
(µA)
COLLECTOR POWER DISSIPATION P
C
(mW)
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta ( C)
2006. 2. 16
Ω
e
(x
µ
)
-5
0 )
h
re
(x1
100
-10
-30
-50
-100
10
-10
-100
-1k
-10k
COLLECTOR CURRENT I
C
(µA)
NF - R
g
, I
C
COMMON
EMITTER
V
CE
=-6V
f=10Hz
C
ob
- V
CB
20
I
E
=0
f=1MHz
Ta=25 C
10
1
10
2
NF=1dB
2
5
3
3
4
6
8
1
-1
-3
-10
-30
-100
-200
COLLECTOR-BASE VOLTAGE V
CB
(V)
-1000
-10000
P
C
- Ta
Revision No : 0
3/3
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