SEMICONDUCTOR
TECHNICAL DATA
VOLTAGE REGULATORS, RELAY DRIVERS
LAMP DRIVERS, ELECTRICAL EQUIPMENT
FEATURES
Adoption of MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Complementary to KTD1624.
KTB1124
EPITAXIAL PLANAR PNP TRANSISTOR
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Vollector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current(Pulse)
Base Current
Collector Power Dissipation
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
P
C
*
RATING
-60
-50
-6
-3
-6
-600
500
1
150
-55
0.8t)
150
UNIT
V
V
V
A
A
mA
mW
W
Junction Temperature
Storage Temperature Range
T
j
T
stg
* : Package mounted on ceramic substrate(250mm
2
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
h
FE
(2)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Turn-on Time
Switching
Time
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
V
CE
=-2V, I
C
=-3A
I
C
=-2A, I
B
=-100
I
C
=-2A, I
B
=-100
V
CE
=-10V, I
C
=-50
V
CB
=-10V, f=1
35
-
-
-
-
-
-
-0.35
-0.94
150
39
70
-
-0.7
-1.2
-
-
-
V
V
SYMBOL
I
CBO
I
EBO
h
FE
(1) (Note)
TEST CONDITION
V
CB
=-40V, I
E
=0
V
EB
=-4V, I
C
=0
V
CE
=-2V, I
C
=-100
MIN.
-
-
100
TYP.
-
-
-
MAX.
-1
-1
400
UNIT.
Storage Time
t
stg
-
450
-
nS
Fall Time
t
f
-
35
-
Note : h
FE
(1) Classification A:100 200, B:140 280, C:200 400
2008. 3. 11
Revision No : 4
1/3
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