PWRLITE LD1010DA
High Performance N-Channel
P
OWERJFET
TM
with PN Diode
Features
Superior gate charge x Rdson product (FOM)
Trench Power JFET with low threshold voltage Vth.
Device fully “ON” with Vgs = 0.7V
Optimum for “Low Side” Buck Converters
Excellent for high frequency dc/dc converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. A PN Diode is added for
applications where a freewheeling diode is required.
This product has tin plated leads.
Applications
DC-DC Converters
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules
DPAK Lead-free Pin Assignments
D
G
D
G
S
S
N – Channel Power JFET
with PN Diode
Pin Definitions
Pin Number
1
2
3
Pin Name
Gate
Drain
Source
Pin Function Description
Gate.
Transistor Gate
Drain.
Transistor Drain
Source.
Transistor Source
V
DS
(V)
24V
Product Summary
Rdson (Ω)
0.0045
I
D
(A)
50
1
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25°C
(V
DD
= 6V
DC
, IL=60A
PK
, L=0.3mH, R
G
=100
Ω)
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25°C)
Symbol
V
DS
V
GS
V
GD
I
D
I
D
E
AS
T
J
T
STG
T
P
D
Ratings
24
-12
-28
50
1
100
220
-55 to 150°C
-65 to 150°C
260°C
80
Units
V
V
V
A
A
mJ
°C
°C
°C
W
LD1010DA Rev 1.03 – 03-05
Thermal Resistance
Symbol
RΘ
JA
RΘ
JC
Parameter
Thermal Resistance Junction-to-Ambient
Thermal Resistance Junction-to-Case
DPAK
Ratings
80
1.56
Units
°C/W
°C/W
Electrical Specifications
(TA = +25°C, unless otherwise noted.)
The
φ
denotes a specification which apply over the full operating temperature range.
Symbol
Parameter
Conditions
Min.
Static
BV
DSX
Breakdown Voltage
I
D
= 0.5 mA
24
Drain to Source
V
GS
= -4 V
BV
GDO
Breakdown Voltage
I
G
= -50µA
Gate to Drain
BV
GSO
Breakdown Voltage
I
G
= -50µA
Gate to Source
R
DS(ON
)
Drain to Source On
I
G
= 40 mA, I
D
=10A
2
Resistance
I
G
= 10 mA, I
D
=10A
I
G
= 5 mA, I
D
=10A
V
GS(TH)
Gate Threshold Voltage
V
DS
=0.1 V, I
D
=250µA
TCV
GSTH
Temperature Coefficient of
V
DS
=0.1 V, I
D
=250µA
Gate Threshold Voltage
Dynamic
Q
Gsync
Total Gate Charge Sync JFET
∆V
Drive
=5V,V
DS
=0.1V
Q
G
Total Gate Charge
∆V
Drive
=5V, I
D
=10A,V
DS
=15V
Q
GD
Gate to Drain Charge
V
DS
=13.5V to V
DS
=1.5V
Q
GS
Gate to Source Charge
V
GS
=-4.5V to V
DS
=13.5V
Q
SW
Switching Charge
V
GS
=-2V to V
DS
=1.5V
R
G
Gate Resistance
T
D(ON
)
Turn-on Delay Time
V
DD
=15V, I
D
=10A
T
R
Rise Time
V
Drive
= 5 V
T
D(OFF)
Turn-off Delay
Resistive Load
T
F
Fall Time
C
ISS
Input Capacitance
C
OSS
Output Capacitance
V
DS
=10V, V
GS
= -5 V, 1MHz.
C
GS
Gate-Source Capacitance
C
GD
Gate-Drain Capacitance
C
DS
Drain-Source Capacitance
I
R
V
R
=20V, Vgs = -4V
V
F
I
F
= 1 A
V
F
I
F
= 10 A
V
F
I
F
= 20 A
Qrr
I
s
= 10 A di/dt = 100A/us,
Trr
I
s
= 10 A di/dt = 100A/us,
Notes:
1. Current is limited by bondwire; with an Rthjc = 1.56
o
C/W the chip is able to carry 102A.
2.
Pulse width <= 500µs, duty cycle < = 2%
2
LD1010DA
PN Diode
Reverse Leakage
Forward Voltage
Forward Voltage
Forward Voltage
Reverse Recovery Charge
Reverse Recovery Time
Typ.
28
-32
-14
3.7
3.8
3.9
-1
-2.8
12.6
15
10.5
4.5
11.4
0.4
6.7
12.4
9
4.6
1465
611
972
493
118
-28
-12
4.5
5.0
Max.
Units
V
V
V
mΩ
mΩ
V
mV/
o
C
nC
nC
nC
nC
nC
Ω
ns
pF
0.3
800
900
960
9.5
14.6
mA
mV
mV
mV
nC
ns
Lovoltech, Inc. -
3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
Product Specification
Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
8
7
6
RDS(mOhms)
1.0
0.5
0.0
-0.5
Vgs (Volts)
1.0E-04
1.0E-03
IG(A)
1.0E-02
1.0E-01
5
4
3
2
1
0
1.0E-05
-1.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
0
5
10
15
20
Qg (nC)
Figure 1 – R
DSON
vs Gate Current at I
D
– 10A
50
45
40
35
ID (mA)
Figure 2 – Gate Charge for V
DS
= 0.1V
Capacitance vs. Vds, Vgs=-5v; DPAK, 25'C
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
5
Ciss
Coss
Crss
30
20
15
10
5
0
0
5
10
15
V D S (V )
20
25
30
C (pF)
25
10
15
Vds (volts)
20
25
Figure 3 – Breakdown Voltage Vds vs Id
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
0.00
0.20
0.40
0.60
0.80
Figure 4 – Capacitance vs Drain Voltage Vds
0.50
0.45
0.40
0.35
V
DS
=12V
IG(A)
ID (A)
0.30
0.25
0.20
0.15
0.10
0.05
V
DS
=0.1V
VGS(V)
0.00
-10
-8
-6
VG (V)
-4
-2
0
Figure 5 – I
G
vs Gate Voltage V
GS
Figure 6 – Transfer Characteristic
Lovoltech, Inc. -
3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1010DA
Product Specification
3
Typical Operating Characteristics
(TA = +25°C, unless otherwise noted.)
1.8
1.7
50
45
40
Igs=10mA
Igs=1µA
Vgs=+0.5V
Vgs=0V
Normalized Rdson
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0
50
100
150
35
30
ID(A)
25
20
15
10
5
0
0
1
2
3
4
Vgs=-0.5V
Vgs=-1.0V
VDS(V)
5
T em p(C )
Figure 7 – R
DSON
=f(T); I
D
= -10A; I
G
= 50mA
0
-2
-4
-6
Figure 8 – I
D
vs V
DS
Characteristics
100
10µs
Id, Drain Current (A)
ID (Amps)
-8
-10
-12
-14
-16
-18
-20
-1.00
-0.90
-0.80
-0.70
-0.60
-0.50
Ig = 40mA
Single Pulse
Tc = 25°C
100µs
10
1ms
Rdson Limit
Thermal Limit
Package Limit
10ms
DC
1
0.1
VDS (Volts)
1
10
100
Vds, Drain-to-Source Voltage (V)
Figure 9 – PN Diode Voltage vs Current
Total Pow er Dissipation (W)
100.00
80.00
60.00
40.00
20.00
0.00
0
50
100
Te m pe rature (C)
150
200
Figure 10 – Safe Operating Area
ZthJA = f(tp) (parameter D= tp/T)
1.E+00
D = 0.5
0.2
ZthJA (K/W)
Ptot (W)
0.1
1.E-01
0.05
0.02
0.01
Single Pulse
tp
T
P(pk)
Note:
1.
Duty Factor D = tp/T
2.
Peak Tj = P(pk)*Z
thJA
+ T
A
1.E-02
1.E-05
1.E-04
1.E-03
1.E-02
tp (s)
1.E-01
1.E+00
1.E+01
Figure 11 – Total Power Dissipation
4
LD1010DA
Figure 12 – Normalized Thermal Response
Lovoltech, Inc. -
3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
Product Specification
Ordering Information
Product Number
LD1010DA
PN Marking
LD1010DA
Package
TO252 (DPAK)
Notes:
This product is Pb-Free and has Tin Plated leads
Package and Marking Information:
DIMENSIONS
DIM.
A
A1
A2
b
b1
B2
C
C2
D
D1
E
e
H
L2
L3
L4
R
Alternate
D
L2
L3
H
mm.
TYP. MIN.
2.19
0.89
0.03
0.76
0.55
5.20
0.45
0.45
5.97
5.30
6.35
2.28
9.35
0.88
1.86
0.64
0.20
5.40
1.25
2.60
9.65
inch
MAX. TYP. MIN.
2.40
0.086
1.14
0.035
0.13
0.001
1.14
0.030
0.90
0.022
5.46
0.205
0.60
0.017
0.58
0.017
6.22
0.235
0.208
6.73
0.250
0.090
10.42
0.368
1.27
0.035
3.57
0.073
1.02
0.025
0.008
5.60
1.75
2.80
9.75
0.213
0.049
0.102
0.380
MAX.
0.094
0.045
0.005
0.045
0.035
0.215
0.023
0.023
0.245
0.265
0.410
0.050
0.140
0.040
E
E
B2
B2
L2
L2
A
C2
H
H
LD1010DA
LD1010DA
XXXXX
XXXX
DPAK
A2
L3
L3
R
L4
L4
D
D
e
e
b
b
b1
b1
A1
C
Back View
0.220
0.069
0.110
0.384
Life Support Policy
LOVOLTECH’s PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF LOVOLTECH, Inc. As used herein:
1. Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or
sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling can
be reasonably expected to result in a significant injury of the user.
2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Product Status
In definition or in
Design
Initial Production
In Production
Definition
This datasheet contains the design specifications for product development.
Specifications may change without notice.
This datasheet contains preliminary data; additional and application data will be
published at a later date. Lovoltech, Inc. reserves the right to make changes at any
time without notice in order to improve design.
This datasheet contains final specifications. Lovoltech reserves the right to make
changes at any time without notice in order to improve the design.
D1
Lovoltech, Inc. -
3970 Freedom Circle - Santa Clara, CA 95054 -USA
Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com
LD1010DA
Product Specification
5
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