LM3046N datasheet, PDF - EEWORLD Datasheet

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LM3046N: DescriptionSMALL SIGNAL TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size178KB，6 Pages; ManufacturerNational Semiconductor（TI ）; Websitehttp://www.ti.com

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LM3046N Overview

SMALL SIGNAL TRANSISTOR

LM3046N Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	National Semiconductor（TI ）
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	15 V
Configuration	COMPLEX
Minimum DC current gain (hFE)	40
highest frequency band	VERY HIGH FREQUENCY BAND
JESD-30 code	R-PDIP-T14
JESD-609 code	e0
Number of components	5
Number of terminals	14
Maximum operating temperature	85 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	550 MHz

LM3046N Related Products

	LM3046N	LM3045	LM3045J	LM3046M	LM3086	LM3086N
Description	SMALL SIGNAL TRANSISTOR	5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR	5 CHANNEL, VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
highest frequency band	VERY HIGH FREQUENCY BAND	VERY high frequency band	VERY HIGH FREQUENCY BAND	VERY HIGH FREQUENCY BAND	VERY high frequency band	VERY HIGH FREQUENCY BAND
Number of components	5	5	5	5	5	5
Number of terminals	14	14	14	14	14	14
surface mount	NO	Yes	NO	YES	Yes	NO
Terminal form	THROUGH-HOLE	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE
Terminal location	DUAL	pair	DUAL	DUAL	pair	DUAL
transistor applications	AMPLIFIER	amplifier	AMPLIFIER	AMPLIFIER	amplifier	AMPLIFIER
Transistor component materials	SILICON	silicon	SILICON	SILICON	silicon	SILICON
Is it Rohs certified?	incompatible	-	incompatible	incompatible	-	incompatible
Maker	National Semiconductor（TI ）	-	National Semiconductor（TI ）	National Semiconductor（TI ）	-	National Semiconductor（TI ）
Reach Compliance Code	unknow	-	unknow	_compli	-	unknow
ECCN code	EAR99	-	EAR99	EAR99	-	EAR99
Other features	LOW NOISE	-	LOW NOISE	LOW NOISE	-	LOW NOISE
Maximum collector current (IC)	0.05 A	-	0.05 A	0.05 A	-	0.05 A
Collector-emitter maximum voltage	15 V	-	15 V	15 V	-	15 V
Configuration	COMPLEX	-	COMPLEX	COMPLEX	-	COMPLEX
Minimum DC current gain (hFE)	40	-	40	40	-	40
JESD-30 code	R-PDIP-T14	-	R-CDIP-T14	R-PDSO-G14	-	R-PDIP-T14
JESD-609 code	e0	-	e0	e0	-	e0
Maximum operating temperature	85 °C	-	125 °C	85 °C	-	85 °C
Package body material	PLASTIC/EPOXY	-	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	-	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	IN-LINE	-	IN-LINE	SMALL OUTLINE	-	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	-	NOT SPECIFIED	235	-	NOT SPECIFIED
Polarity/channel type	NPN	-	NPN	NPN	-	NPN
Certification status	Not Qualified	-	Not Qualified	Not Qualified	-	Not Qualified
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature	NOT SPECIFIED	-	NOT SPECIFIED	30	-	NOT SPECIFIED
Nominal transition frequency (fT)	550 MHz	-	550 MHz	550 MHz	-	550 MHz

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