EEWORLDEEWORLDEEWORLD

Part Number

Search

MJW18020_10

Description
30 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247AD
Categorysemiconductor    Discrete semiconductor   
File Size105KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

MJW18020_10 Overview

30 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-247AD

MJW18020_10 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current30 A
Maximum Collector-Emitter Voltage450 V
Processing package descriptionLEAD FREE, CASE 340L-02, TO-247, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor5.5
Rated crossover frequency13 MHz
MJW18020
NPN Silicon Power
Transistors High Voltage
Planar
The MJW18020 planar High Voltage Power Transistor is
specifically Designed for motor control applications, high power
supplies and UPS’s for which the high reproducibility of DC and
Switching parameters minimizes the dead time in bridge
configurations.
Features
http://onsemi.com
High and Excellent Gain Linearity
Fast and Very Tight Switching Times Parameters t
si
and t
fi
Very Stable Leakage Current due to the Planar Structure
High Reliability
Pb−Free Package is Available*
30 AMPERES
1000 VOLTS BV
CES
450 VOLTS BV
CEO,
250 WATTS
MAXIMUM RATINGS
Rating
Collector−Emitter Sustaining Voltage
Collector−Emitter Breakdown Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Continuous
Peak (Note 1)
Base Current
Continuous
Peak (Note 1)
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
D
T
J
, T
stg
Value
450
1000
1000
9.0
30
45
6.0
10
250
2.0
−65
to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
_C
1
2
3
TO−247
CASE 340L
MARKING DIAGRAM
MJW18020
AYWWG
Total Power Dissipation @ T
C
= 25_C
Derate Above 25_C
Operating and Storage Junction
Temperature Range
1 BASE
3 EMITTER
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes: 1/8” from Case for 5 Seconds
Symbol
R
qJC
R
qJA
T
L
Max
0.5
50
275
Unit
_C/W
_C/W
_C
A
Y
WW
G
2 COLLECTOR
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5
ms,
Duty Cycle
10%.
ORDERING INFORMATION
Device
MJW18020
MJW18020G
Package
TO−247
TO−247
(Pb−Free)
Shipping
30 Units/Rail
30 Units/Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2012
January, 2012
Rev. 3
1
Publication Order Number:
MJW18020/D

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2837  2697  407  2059  2826  58  55  9  42  57 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号