MMBD4448T Series
Elektronische Bauelemente
Plastic-Encapsulated Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
Fast switching speed
For general purpose switching applications
High conductance
1
SOT-523
A
3
3
L
Top View
2
C B
1
2
K
E
D
MARKING
Part
Name
Marking
MMBD4448T
A3
MMBD4448TA
A6
MMBD4448TC
A7
MMBD4448TS
A8
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
1.50
1.70
1.45
1.75
0.75
0.85
0.70
0.90
0.90
1.10
0.25
0.33
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.00
0.15
0.28
0.40
0.10
0.20
-
-
0.75
0.85
Circuit
ABSOLUTE MAXIMUM RATINGS
(Single Diode @ Ta = 25°C)
Parameter
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Thermal Resistance Junction to Ambient
Storage Temperature
@ t = 1.0µs
@ t = 1.0s
Symbol
V
RM
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
I
O
I
FSM
P
D
R
θJA
T
STG
Value
100
80
57
500
250
4.0
1.5
150
833
-65 ~ 150
Unit
V
V
V
mA
mA
A
mW
℃
/W
℃
ELECTRICAL CHARACTERISTICS
(at Ta = 25°C unless otherwise specified)
Parameters
Reverse Breakdown Voltage
Forward Voltage (Note 2)
Symbol
V
R
V
F1
V
F2
V
F3
V
F4
I
R
C
T
t
RR
Min.
80
0.62
-
-
-
-
-
-
-
Max.
-
0.720
0.855
1.00
1.25
0.10
25
3.50
4.00
Unit
V
V
V
V
V
µA
nA
pF
nS
Test Conditions
I
R
= 2.5 µA
I
F
= 5.0 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 150 mA
V
R
= 70 V
V
R
= 20 V
V
R
= 6 V, f = 1.0 MHz
V
R
= 6 V, I
F
= 5.0 mA
Peak Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
01-Jun-2008 Rev. A
Page 1 of 2
MMBD4448T Series
Elektronische Bauelemente
Plastic-Encapsulated Switching Diode
RATINGS AND CHARACTERISTIC CURVES (MMBD4448T)
01-Jun-2008 Rev. A
Page 2 of 2
Test/Measurement
京公网安备 11010802033920号
EEWORLD
