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YG811S06R

Description
5 A, 60 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size51KB,3 Pages
ManufacturerETC
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YG811S06R Overview

5 A, 60 V, SILICON, RECTIFIER DIODE

YG811S06R
SCHOTTKY BARRIER DIODE
(60V / 5A TO-22OF15)
Outline Drawings
10.5
±0.5
ø3.2
+0.2
-0.1
4.5
±0.2
2.7
±0.2
6.3
2.7
±0.2
3.7
±0.2
1.2
±0.2
13
Min
0.7
±0.2
Features
Low V
F
Super high speed switching.
High reliability by planer design.
15
±0.3
0.6
±0.2
2.7
±0.2
5.08
±0.4
JEDEC
EIAJ
SC-67
Applications
High speed power switching.
Connection Diagram
1
3
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Item
Repetitive peak reverse voltage
Repetitive peak surge reverse voltage
Isolation
voltage
Average output current
Surge
current
Operating junction temperature
Storage temperature
Symbol
V
RRM
V
RSM
V
iso
I
O
I
FSM
T
j
T
stg
Conditions
Rating
60
Unit
V
V
V
A
A
°C
°C
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=127°C
Rectangl wave
Sine wave 10ms
60
1500
5
80
-40 to +150
-40 to +150
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Thermal resistance
Symbol
V
F
I
R
R
th(j-c)
Conditions
I
F
=5.0A
V
R
=V
RRM
Junction to case
Max.
0.59
5.0
5.0
Unit
V
mA
°C/W
Mechanical Characteristics
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
N·m
g
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