Absolute Maximum Ratings
Symbol Conditions
1)
V
RRM
I
F
I
FSM
I
2
t
Tsolder
T
vj
, (T
stg
)
4)
Values
600
44
440
970
375
– 40 ... +150 (125)
Units
V
A
A
A
2
s
°C
°C
SEMICELL
CAL - Diode Chips
SKCD 31C 060 I
Preliminary Data
(> 6 bondwires 300
µm
Ø)
t
p
= 10 ms; sin; T
j
= 150 °C)
t
p
= 10 ms; sin; T
j
= 150 °C)
max. 120 s (transfer)
Characteristics
Symbol Conditions
I
R
V
F
V
F
V
T(TO)
r
T
I
RRM
Q
rr
Tsolder
Tsolder
1)
min.
–
–
–
–
–
–
–
–
–
–
–
–
typ.
–
1,45
1,3
1,55
1,55
0,85
9
30
3,3
250
–
max.
0,1(4)
1,7
–
–
–
0,9
16
–
–
–
–
340
Units
mA
V
V
V
V
V
mΩ
A
µC
µC
°C
°C
T
j
= 25 (125) °C; V
RRM
I
F
= 50 A, T
j
= 25 °C
T
j
= 125 °C
I
F
= 75 A, T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C, see Fig. 1
T
j
= 125 °C
I
F
= 50 A, T
j
= 125 °C
2)
I
F
= 50 A, T
j
= 25 °C
2)
T
j
= 125 °C
10 min
5 min
Mechanical Data
A
tot
A
act.
w
total area
active area
weight
31
20
20
mm
2
mm
2
mg
Supplied on chip carriers (100 units) 102 x 102 x 8 mm
or supplied on frames, on request
Please contact factory
Features
•
Low voltage drop
•
low temperature dependence
•
Very soft reverse recovery under
all
conditions
•
CAL = Controlled Axial Lifetime
Technology
•
Top side = Al for bonding by
aluminium wire
•
Bottom = 4 layer metallisation for
soldering
Typical Applications
•
Inverse diode for IGBT
(in inverter drives)
•
Freewheeling diode in brake
choppers or step-up choppers
with IGBT or MOSFET
•
UPS Uninterruptible Power
Supplies
•
Hybrid circuits for static power
converters
1)
2)
4)
T
case
= 25 °C, unless otherwise specified
V
R
= 300 V, –di
F
/dt = 800 A/µs
Soldered on DCB ceramic (AL
2
O
3
) 0,4 mm thick
on a 3 mm copper base plate R
thjc
= 1,0 K/W
T
jm
= 150 °C; T
case
= 80 °C
© by SEMIKRON
0898
0896
B 15 – 11
80
A
60
CD31C060..X LS-1
60
A
50
V
CC
= 300V
T
vj
= 125 °C
I
F
= 50 A
40
CD31C060.X LS -2
125°C
40
25°C
30
20
20
10
I
F
0
0
V
F
1
V
2
I
RR
0
0
400
di
F
/dt
800
1200
1600
A/µs
2000
2400
Fig. 1 Typ. CAL diode forward characteristic
Fig. 2 Typ. peak reverse recovery current I
RR
= f (di
F
/dt)
5
µC
60
A
50
40
30
20
10
0
-10
-20
-30
I
R
-40
0
t
200
400
600
800
ns
V
R
I
R
CD031C060.X LS -3
CD31C060.xls -5
V
CC
= 300 V
T
vj
= 125 °C
75 A
I
FM
=
50 A
38 A
T
vj
= 125 °C
di
F
/dt = -800 A/µs
40
V
0
-40
-80
-120
-160
-200
-240
-280
V
R
-320
4
3
25 A
2
13 A
1
Q
rr
0
0
500
di
F
/dt
1000
1500
2000
A/µs
2500
-360
1000
Fig. 3 Typ. diode reverse recovery behaviour i = f (t)
Fig. 4 Typ. reverse recovery charge Q
rr
= f (di
F
/dt)
Fig. 5 Mechanical outline (dimensions in mm)
B 15 – 12
0896
0898
© by SEMIKRON
Embedded System
京公网安备 11010802033920号
EEWORLD
