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SB120

Description
1 A, 20 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size112KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
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SB120 Overview

1 A, 20 V, SILICON, SIGNAL DIODE, DO-41

SIYU
R
塑封肖特基二极管
特征
Features
SB120 ...... SB1100
PLASTIC SCHOTTKY
BARRIER RECTIFIER
DO-41
·大电流承受½力。High
Current Capability
·正向压降½。Low
Forward Voltage Drop
.034(0.9)
DIA
.028(0.7)
1.0(25.4)
MIN
·高温焊接保证
High temperature soldering guaranteed:
260℃/10
秒,
0.375" (9.5mm)引线长度。
260℃/10 seconds, 0.375" (9.5mm) lead length,
·引线可承受5 磅
(2.3kg)
拉力。
5 lbs. (2.3kg) tension
·引线和管½皆符合RoHS标准 。
Lead and body according with RoHS standard
.205(5.2)
.166(4.2)
.107(2.7)
DIA
.080(2.0)
1.0(25.4)
MIN
机械数据
Mechanical Data
·端子: 镀锡½向引线
Terminals: Plated axial leads
·极性: 色环端为负极
Polarity: Color band denotes cathode end
·安装½½: 任意
Mounting Position: Any
Unit:inch(mm)
极限值和电参数
TA = 25℃
除非另有规定。
Maximum Ratings & Electrical Characteristics
符号
Symbols
最大峰值反向电压
Maximum repetitive peak reverse voltage
Ratings at 25℃ ambient temperature unless otherwise specified.
SB
120
SB
130
SB
140
SB
150
SB
160
SB
180
SB
1100
单½
Unit
V
RRM
V
R(RMS)
V
DC
I
FM
IF = 1.0A
20
14
20
30
21
30
40
28
40
50
35
50
1.0
60
42
60
80
56
80
100
70
100
V
V
V
A
最大反向有效值电压
Maximum RMS voltage
最大直流阻断电压
Maximum DC blocking voltage
最大正向平均整流电流
Maximum average forward rectified current
最大正向电压降
Maximum forward voltage
V
F
I
FSM
IR
R
θJA
Cj
Tj, T
STG
0.5
40
0.5
10
50
110
0.7
0.85
V
A
mA
℃/W
正向峰值浪涌电流 8.3mS单一正弦半波
Peak forward surge current 8.3 ms single half sine-wave
最大反向漏电流
Maximum reverse current
TA = 25℃
TA = 100℃
典型热阻
典型结电容
Typical thermal resistance
VR = 4.0V f = 1.0MHz
Type junction capacitance
80
-55 --- +150
60
pF
工½温度和存储温度
Operating junction and storage temperature range
大昌电子
DACHANG ELECTRONICS

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