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SB160T-G

Description
1 A, 20 V, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size52KB,3 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
Environmental Compliance
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SB160T-G Overview

1 A, 20 V, SILICON, SIGNAL DIODE, DO-41

SB160T-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerComchip Technology
package instructionO-PALF-W2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.7 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current30 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage60 V
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Leaded Schottky Barrier Rectifiers
Comchip
SMD Diode Specialist
SB120-G Thru. SB1100-G
Voltage: 20 to 100 V
Current: 1.0 A
RoHS Device
Features
-Low
drop down voltage.
-Metal-Semiconductor junction with guard ring
-High
surge current capability
-Silicon
epitaxial planar chips.
-For use in low voltage, high efficiency inverters,
free wheeling, and polarity protection applications
-Lead-free
part, meet RoHS requirements.
1.0(25.4) Min.
.107(2.7)
.080(2.0)
DO-41
.205(5.2)
.160(4.1)
Mechanical data
-Epoxy:
UL94-V0 rated flame retardant
-Case:
Molded plastic body DO-41
-Terminals:
Solderable per MIL-STD-750 Method 2026
-Polarity:
Color band denotes cathode end
-Mounting
Position: Any
-Weight:
0.34grams
Dimensions in inches and (millimeter)
1.0(25.4) Min.
.034(0.86)
.028(0.70)
Electrical Characteristics
(at TA=25°C unless otherwise noted)
Ratings at Ta=25°C unless otherwise noted.
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA=75°C, See Figure 1
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
SB
120-G
20
14
20
SB
140-G
40
28
40
SB
145-G
45
30
45
SB
150-G
50
35
50
1.0
SB
160-G
60
42
60
SB
180-G
80
56
80
SB
1100-G
100
70
100
Unit
V
V
V
A
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load
(JEDEC method)
TL=110°C
I
FSM
V
F
30
A
V
mA
Maximum forward voltage at 1.0A
Maximum DC reverse current
At rated DC blocking voltage
T
A
=25°C
T
A
=100°C
0.50
0.5
0.70
0.85
I
R
10
C
J
R
θJA
R
θJL
T
J
T
STG
-55 to +125
-55 to +150
110
50.0
30.0
-55 to +150
80
5
30
Typical junction capacitance (Note 1)
Typical t
hermal resistance
(Note 2)
Operating junction temperature range
Storage temperature range
NOTES:
pF
°C/W
°C
°C
1.
Measured at 1.0MHz and applied reverse voltage of 4.0 Volts
.
2. Thermal resistance junction to ambient and junction to lead.
REV:A
QW-BB040
Page 1
Comchip Technology CO., LTD.

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