d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
For technical questions, contact:
pmostechsupport@vishay.com
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1
Operating Junction and Storage Temperature Range
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ300DT
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Channel-1
Parameter
a, b
Channel-2
Typ.
24
3.2
Max.
30
4
Unit
°C/W
t
10 s
27
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Steady State
6
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. Maximum under steady state conditions is 69 °C/W for channel-1 and 64 °C/W for channel-2.
Symbol
R
thJA
R
thJC
Typ.
Max.
34
7.5
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate Source Leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0, I
D
= 250 µA
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
5
V, V
GS
= 10 V
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 9.8 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 8.5 A
V
GS
= 4.5 V, I
D
= 12 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 9.8 A
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 15 A
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 9.8 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 15 A
f = 1 MHz
Ch-1
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.5
0.5
400
730
125
155
25
65
7.4
14.2
3.5
6.8
1.5
2.2
1.1
2.3
2.6
2.6
5.2
5.2
12
22
5.3
11
nC
pF
g
fs
V
DS
= 15 V, I
D
= 9.8 A
V
DS
= 15 V, I
D
= 15 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
10
10
0.0200 0.0240
0.0090 0.0110
0.0265 0.0320
0.0135 0.0165
30
30
S
1
1
30
30
24
30
- 4.1
-5
2.4
2.2
± 100
± 100
1
1
5
5
A
µA
V
nA
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
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For technical questions, contact:
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Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ300DT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Dynamic
a
Symbol
Test Conditions
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 1.9
I
D
8 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 1.9
I
D
8 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
I
S
= 8 A, V
GS
= 0 V
I
S
= 10 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
I
F
= 8 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Typ.
25
25
45
80
10
20
10
40
5
5
10
20
10
15
7
10
Max.
50
50
90
160
20
40
20
80
10
10
20
40
20
30
15
20
11
26
30
40
Unit
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
0.84
0.82
17
20
9
14
9.5
12.5
7.5
7.5
1.2
1.2
35
40
20
30
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ300DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
30
20
25
I
D
- Drain Current (A)
V
GS
= 10 V thru 4 V
20
16
I
D
- Drain Current (A)
12
T
C
= 25
°C
15
8
T
C
= 125
°
C
T
C
= - 55
°C
10
5
V
GS
= 3 V
4
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
0.05
600
Transfer Characteristics
0.04
R
DS(on)
- On-Resistance (Ω)
500
C - Capacitance (pF)
V
GS
= 4.5 V
0.03
400
C
iss
300
0.02
V
GS
= 10 V
0.01
200
C
oss
100
C
rss
0
0
5
10
15
20
I
D
- Drain Current (A)
25
30
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (Normalized)
V
DS
= 15 V
1.6
I
D
= 9.8 A
1.4
Capacitance
V
GS
= 10 V
V
GS
- Gate-to-Source Voltage (V)
8
I
D
= 11 A
V
GS
= 4.5 V
1.2
6
V
DS
= 7.5 V
4
V
DS
= 24 V
1.0
2
0.8
0
0
2
4
6
Q
g
- Total Gate Charge (nC)
8
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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For technical questions, contact:
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Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ300DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.06
10
R
DS(on)
- On-Resistance (Ω)
T
J
= 150
°C
I
S
- Source Current (A)
0.05
I
D
= 9.8 A
0.04
T
J
= 125
°C
0.03
1
T
J
= 25
°C
0.02
T
J
= 25
°C
0.01
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
0
0
2
4
6
8
V
GS
- Gate-to-Source Voltage (V)
10
Source-Drain Diode Forward Voltage
2.4
50
On-Resistance vs. Gate-to-Source Voltage
2.2
40
Power (W)
V
GS(th)
(V)
2.0
30
1.8
I
D
= 250 μA
20
1.6
10
1.4
- 50
- 25
0
25
50
75
100
125
150
T
J
- Temperature (°C)
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
100
Single Pulse Power
Limited by R
DS(on)
*
10
I
D
- Drain Current (A)
100 μs
1 ms
1
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.1
T
A
= 25
°C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67715
S12-1361-Rev. D, 11-Jun-12
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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