d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2.
Document Number: 63539
S11-2380-Rev. C, 28-Nov-11
www.vishay.com
1
Symbol
R
thJA
R
thJC
Typ.
Max.
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ910DT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
Gate Source Leakage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
5
V, V
GS
= 10 V
V
DS
5
V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 20 A
Forward Transconductance
b
Dynamic
a
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
Channel-2
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
Total Gate Charge
Q
g
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
Channel-1
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Q
gs
Q
gd
R
g
Channel-2
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
Ch-1
Channel-1
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.5
0.1
1500
3600
285
660
125
305
26
60
12.5
29
4.7
10
4
9.5
2.6
0.6
5.2
1.2
40
110
19
51
nC
pF
g
fs
V
DS
= 10 V, I
D
= 20 A
V
DS
= 10 V, I
D
= 20 A
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
20
25
0.0048 0.0058
0.0025 0.0030
0.0060 0.0075
0.0029 0.0035
94
140
S
1.2
1
30
30
33
31
- 5.4
- 6.1
2.2
2.2
± 100
± 100
1
1
5
5
A
µA
V
nA
mV/°C
V
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
www.vishay.com
2
Document Number: 63539
S11-2380-Rev. C, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ910DT
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Dynamic
a
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Symbol
Test Conditions
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 4.5 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Channel-1
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Channel-2
V
DD
= 15 V, R
L
= 1.5
I
D
10 A, V
GEN
= 10 V, R
g
= 1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
I
S
= 10 A, V
GS
= 0 V
I
S
= 10 A, V
GS
= 0 V
Ch-1
Ch-2
Ch-1
Ch-2
Channel-1
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Channel-2
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
Typ.
20
30
25
35
25
35
10
12
10
12
25
12
30
35
10
10
Max.
40
60
50
70
50
70
20
25
20
25
25
25
60
70
20
20
40
40
100
120
Unit
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
ns
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
0.8
0.8
26
36
25
36
17
20
9
16
1.2
1.2
50
70
50
70
V
ns
nC
ns
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 µs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 63539
S11-2380-Rev. C, 28-Nov-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ910DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
V
GS
= 10 V thru 4 V
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
16
20
60
12
T
C
= 25
°C
8
T
C
= 125
°C
40
V
GS
= 3 V
20
4
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source Voltage (V)
3.0
T
C
= - 55
°C
0
0.0
0.5
1.0
1.5
2.0
2.5
V
GS
- Gate-to-Source Voltage (V)
3.0
Output Characteristics
0.008
2000
Transfer Characteristics
0.007
R
DS(on)
- On-Resistance (Ω)
C - Capacitance (pF)
1600
C
iss
0.006
V
GS
= 4.5 V
1200
0.005
V
GS
= 10 V
0.004
800
C
oss
C
rss
400
0.003
0
20
40
60
80
100
I
D
- Drain Current (A)
0
0
5
10
15
20
25
V
DS
- Drain-to-Source Voltage (V)
30
On-Resistance vs. Drain Current
10
R
DS(on)
- On-Resistance (Normalized)
I
D
= 20 A
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
= 7.5 V
1.8
I
D
= 20 A
1.6
Capacitance
1.4
V
GS
= 10, 4.5 V
1.2
6
V
DS
= 15 V
V
DS
= 24 V
4
1.0
2
0.8
0
0
6
12
18
24
30
Q
g
- Total Gate Charge (nC)
0.6
- 50
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
www.vishay.com
4
Document Number: 63539
S11-2380-Rev. C, 28-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SiZ910DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
100
0.016
I
D
= 20 A
0.014
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
T
J
= 150
°C
0.012
0.010
0.008
0.006
0.004
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
- Source-to-Drain Voltage (V)
1.2
0.002
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25
°C
T
J
= 125
°C
10
1
T
J
= 25
°C
Source-Drain Diode Forward Voltage
2.0
100
On-Resistance vs. Gate-to-Source Voltage
1.8
80
1.6
Power (W)
75
100
125
150
V
GS(th)
(V)
60
1.4
I
D
= 250 μA
1.2
40
1.0
20
0.8
- 50
- 25
0
25
50
0
0.001
0.01
0.1
T
J
- Temperature (°C)
1
Time (s)
10
100
1000
Threshold Voltage
1000
Limited by R
DS(on)
*
100
I
D
- Drain Current (A)
100 μs
10
1 ms
1
10 ms
100 ms
1s
10 s
DC
BVDSS Limited
0.01
0.1
1
10
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
Single Pulse Power
0.1
T
A
= 25
°C
Single Pulse
Safe Operating Area, Junction-to-Ambient
Document Number: 63539
S11-2380-Rev. C, 28-Nov-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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