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SI1034X_05

Description
N-Channel 20-V (D-S) MOSFET
File Size110KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet View All

SI1034X_05 Overview

N-Channel 20-V (D-S) MOSFET

Si1034X
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
5 at V
GS
= 4.5 V
20
7 at V
GS
= 2.5 V
9 at V
GS
= 1.8 V
10 at V
GS
= 1.5 V
I
D
(mA)
200
175
150
50
FEATURES
Halogen-free Option Available
• TrenchFET
®
Power MOSFET: 1.5 V Rated
• Low-Side Switching
• Low On-Resistance: 5
Ω
• Low Threshold: 0.9 V (typ.)
• Fast Switching Speed: 35 ns (typ.)
• 1.5 V Operation
• Gate-Source ESD Protected: 2000 V
RoHS
COMPLIANT
SC-89
S
1
1
6
D
1
BENEFITS
• Ease in Driving Switches
• Low Offset (Error) Voltage
Marking Code: L
G
1
2
5
G
2
• Low-Voltage Operation
• High-Speed Circuits
• Low Battery Voltage Operation
D
2
3
4
S
2
Top
View
Ordering Information:
Si1034X-T1-E3 (Lead (Pb)-free)
Si1034X-T1-GE3 (Lead (Pb)-free and Halogen-free)
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
• Power Supply Converter Circuits
• Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain Current
b
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
ESD
450
280
145
- 55 to 150
2000
190
140
650
380
250
130
mW
°C
V
5s
20
±5
180
130
mA
Steady State
Unit
V
Document Number: 71427
S-80643-Rev. B, 24-Mar-08
www.vishay.com
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