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SM5S10

Description
3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB
CategoryDiscrete semiconductor    diode   
File Size103KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SM5S10 Overview

3600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-218AB

SM5S10 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
Breakdown voltage nominal value12.35 V
Maximum clamping voltage18.8 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee0
polarityUNIDIRECTIONAL
Maximum repetitive peak reverse voltage10 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
SM5S10 thru SM5S36A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• T
J
= 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DO-218AB
PRIMARY CHARACTERISTICS
V
WM
V
BR
P
PPM
(10 x 1000 μs)
P
PPM
(10 x 10 000 μs)
P
D
I
FSM
T
J
max.
Polarity
Package
10 V to 36 V
11.1 V to 44.2 V
3600 W
2800 W
5W
500 A
175 °C
Uni-directional
DO-218AB
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case:
DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ..., revision code only
applicable for part number with ± 5 % tolerance)
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
heatsink is anode
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
with 10/1000 μs waveform
with 10/10 000 μs waveform
SYMBOL
P
PPM
P
D
I
PPM
(1)
VALUE
3600
2800
5.0
See next table
500
-55 to +175
UNIT
W
W
A
A
°C
Power dissipation on infinite heatsink at T
C
= 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note
(1)
Non-repetitive current pulse at T = 25 °C
A
I
FSM
T
J
, T
STG
Revision: 22-Jul-16
Document Number: 88382
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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