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KA5M0965Q
Fairchild Power Switch(SPS)
Features
•
•
•
•
•
•
•
•
•
•
Precision fixed operating frequency (70kHz)
Low start-up current(typ. 100uA)
Pulse by pulse current limiting
Over Load protection
Over current protection
Over voltage protecton (Min. 25V)
Internal thermal shutdown function
Under voltage lockout
Internal high voltage sense FET
Latch mode
Description
The SPS product family is specially designed for an off-line
SMPS with minimal external components. The SPS consist
of high voltage power SenseFET and current mode PWM
IC. Included PWM controller features integrated fixed fre-
quency oscillator, under voltage lock-out, leading edge
blanking, optimized gate turn-on/turn-off driver, thermal
shutdown protection, over voltage protection, and tempera-
ture compensated precision current sources for loopcompen-
sation and fault protection circuitry. Compared to discrete
MOSFET and PWM controller or RCC solution, a SPS can
reduce total component count, design size, weight and at the
same time increase efficiency, productivity, and system reli-
ability. It has a basic platform well suited for cost-effective
design in either a flyback converter or a forward converter.
TO-3P-5L
1. DRAIN 2. GND 3. VCC 4. FB 5. S/S
Internal Block Diagram
Vcc
3
+
27V
Drain
1
UVLO
INTERNAL
BIAS
Good Logic
CLK
OVP
OVP-out
-
V
CC
V
REF
5uA
15V/9V
1mA
Vref
VOLTAGE
Sense
LIMIT
CIRCUIT
FET
OSC
Feedback 4
Soft Start 5
+
7.5V
5V
O LP
2.5R
14V
S
-
+
LEB
R
Q
R
-
TSD
(T
J
=150
℃
)
OVP-out
(V
CC
=27V)
OCL
(V
S
=1.4V)
V
O F F S E T
V
S
Rsense
Q
R
S
Power-on Reset
/Auto-restart
2 GND
※
LEB : Leading Edge Blanking
※
OCL : Over Current Limit
Shutdown
Latch
Rev.1.0.1
©2001 Fairchild Semiconductor Corporation
KA5M0965Q
Absolute Maximum Ratings
Characteristic
Maximum Drain voltage
(1)
Drain-Gate voltage (R
GS
=1MΩ)
Gate-source (GND) voltage
Drain current pulsed
(2)
Single pulsed avalanche energy
(3)
Continuous drain current (T
C
=25°C)
Continuous drain current (T
C
=100°C)
Maximum Supply voltage
Input voltage range
Total power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
D,MAX
V
DGR
V
GS
I
DM
E
AS
I
D
I
D
V
CC,MAX
V
FB
P
D
(watt H/S)
Derating
T
A
T
STG
Value
650
650
±30
36.0
950
9.0
5.8
30
−0.3
to V
SD
170
1.33
−25
to +85
−55
to +150
Unit
V
V
V
A
DC
mJ
A
DC
A
DC
V
V
W
W/°C
°C
°C
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=20mH, V
DD
=50V, R
G
=27Ω, starting Tj=25°C
2
KA5M0965Q
Electrical Characteristics (SFET part)
(Ta = 25°C
unless otherwise specified)
Characteristic
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source on resistance
(note)
Forward transconductance
(note)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate-source charge
Gate-drain (Miller) charge
Note:
Pulse test: Pulse width < 300µS, duty < 2%
1
S
= ---
-
R
Symbol
BV
DSS
I
DSS
R
DS(ON)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test condition
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating,
V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=4.5A
V
DS
=50V, I
D
=4.5A
V
GS
=0V, V
DS
=25V,
f=1MHz
V
DD
=0.5BV
DSS
, I
D
=9.0A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
=10V, I
D
=9.0A,
V
DS
=0.8BV
DSS
Min.
650
-
-
-
5.0
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.96
-
1200
135
25
25
75
130
70
45
8
22
Max.
-
50
200
1.2
-
-
-
-
60
160
270
150
60
-
-
Unit
V
µA
mA
W
S
pF
nS
nC
3
KA5M0965Q
Electrical Charcteristics (SFET part) (Continued)
(Ta = 25°C unless otherwise specified)
Characteristic
UVLO SECTION
Start threshold voltage
Stop threshold voltage
OSCILLATOR SECTION
Initial accuracy
Frequency change with temperature
(2)
Maximum duty cycle
FEEDBACK SECTION
Feedback source current
Shutdown Feedback voltage
Shutdown delay current
SOFT START SECTION
Soft Start Voltage
Soft Start Current
Peak Current Limit
PROTECTION SECTION
Thermal shutdown temperature (Tj)
(1)
Over voltage protection voltage
TOTAL DEVICE SECTION
Start Up current
Operating supply current (control part only)
I
START
I
OP
V
CC
=14V
V
CC
<28
-
-
0.1
7
0.17
12
mA
mA
T
SD
V
OVP
-
V
CC
>24V
140
25
160
27
-
29
°C
V
I
FB
V
SD
Idelay
V
SS
I
SS
I
OVER
Ta=25°C, 0V<Vfb<3V
Vfb>6.5V
Ta=25°C, 5V≤Vfb≤V
SD
V
FB
=2V
Sync & S/S=GND
Max. inductor current
0.7
6.9
4
4.7
0.8
5.28
0.9
7.5
5
5.0
1.0
6.00
1.1
8.1
6
5.3
1.2
6.72
mA
V
µA
V
mA
A
F
OSC
-
Dmax
Ta=25°C
−25°C≤Ta≤+85°C
-
61
-
74
67
±5
77
73
±10
80
kHz
%
%
V
START
V
STOP
-
After turn on
8.4
14
9
15
9.6
16
V
V
Symbol
Test condition
Min.
Typ.
Max.
Unit
CURRENT LIMIT(SELF-PROTECTION)SECTION
NOTE:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS(water test) process
3. These parameters are indicated Inductor current.
4
KA5M0965Q
Typical Performance Characteristics
Top :
1
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
Bottom :
V
GS
15 V
10 V
8.0 V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
10
1
150
℃
25
℃
0
10
0
10
-55
℃
10
-1
※
Note :
1. 250μ s Pulse Test
2. T
C
= 25℃
-1
※
Note
1. V
DS
= 50V
2. 250μ s Pulse Test
10
10
0
10
1
10
-1
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. Output Characteristics
1.3
Figure 2. Thansfer Characteristics
I
DR
, Reverse Drain Current [A]
R
DS(on)
, [
Ω
]
Drain-Source On-Resistance
1.2
V
GS
= 10V
1.1
V
GS
= 20V
1.0
10
1
10
0
0.9
150℃
25℃
※
Note :
1. V
GS
= 0V
2. 250μ s Pulse Test
0.8
0
2
4
6
8
10
12
14
16
10
-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Figure 3. On-Resistance vs. Drain Current
3000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 4. Source-Drain Diode Forward Voltage
12
V
GS
, Gate-Source Voltage [V]
2500
10
V
DS
= 120V
V
DS
= 300V
V
DS
= 480V
Capacitances [pF]
2000
C
iss
8
1500
C
oss
6
1000
C
rss
※
Note ;
1. V
GS
= 0 V
2. f = 1 MHz
4
500
2
※
Note : I
D
= 8.5 A
0
-1
10
10
0
10
1
0
0
5
10
15
20
25
30
35
40
45
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance vs. Drain-Source Voltage
Figure 6. Gate Charge vs. Gate-Source Voltage
5
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