SS10P5, SS10P6
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifier
eSMP
®
Series
K
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Guardring for overvoltage protection
• Low forward voltage drop, low power losses
1
2
Available
• High efficiency
• Low thermal resistance
• Meet MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMPC (TO-277A)
K
Cathode
Anode 1
Anode 2
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
E
AS
V
F
at I
F
= 10 A
T
J
max.
Package
Diode variations
10 A
50 V, 60 V
280 A
20 mJ
0.55 V
150 °C
TO-277A (SMPC)
Single
MECHANICAL DATA
Case:
TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters, freewheeling
diodes, DC/DC converters, and polarity protection
application.
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at I
AS
= 2 A, T
J
= 25 °C
Operating junction and storage temperature range
Notes
(1)
Units mounted on infinite heatsink
(2)
Units mounted on 5 cm x 5 cm, 2 oz. copper pad
V
RRM
I
F(AV)
I
FSM
E
AS
T
J
, T
STG
SYMBOL
SS10P5
S105
50
10
(1)
7
(2)
280
20
-55 to +150
SS10P6
S106
60
V
A
A
mJ
°C
UNIT
Revision: 27-Nov-17
Document Number: 89043
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS10P5, SS10P6
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
I
F
= 5 A
I
F
= 7 A
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
F
= 10 A
I
F
= 5 A
I
F
= 7 A
I
F
= 10A
SYMBOL
TYP.
0.51
0.55
0.59
0.42
0.47
0.55
I
R (2)
C
J
7.8
5.9
560
MAX.
-
-
0.67
-
-
0.63
150
15
-
μA
mA
pF
V
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Instantaneous forward voltage
Reverse current
Typical junction capacitance
Rated V
R
4.0 V, 1 MHz
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise specified)
PARAMETER
Typical thermal resistance per diode
SYMBOL
R
JA
(1)
R
JL
SS10P5
60
3
SS10P6
UNIT
°C/W
Note
(1)
Units mounted on recommended PCB 1 oz. pad layout
ORDERING INFORMATION
(Example)
PREFERRED P/N
SS10P6-M3/86A
SS10P6-M3/87A
SS10P6HM3_A/H
(1)
SS10P6HM3_A/I
(1)
(1)
UNIT WEIGHT (g)
0.10
0.10
0.10
0.10
PACKAGE CODE
86A
87A
H
I
BASE QUANTITY
1500
6500
1500
6500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
Revision: 27-Nov-17
Document Number: 89043
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS10P5, SS10P6
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise specified)
12
Resistive or Inductive Load
100
Instantaneous Reverse Current (mA)
Average Forward Current (A)
10
10
1
T
A
= 150 °C
8
6
4
2
T
L
measured
at the Cathode Band Terminal
T
A
= 125 °C
0.1
0.01
0.001
T
A
= 25 °C
0
0
25
50
75
100
125
150
175
0.0001
10
20
30
40
50
60
70
80
90
100
Lead Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 4 - Typical Reverse Leakage Characteristics
7
D = 0.5 D = 0.8
6
5
4
3
T
2
1
0
0
2
4
6
8
10
12
D = 0.3
D = 1.0
D = 0.2
D = 0.1
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Junction Capacitance (pF)
Average Power Loss (W)
100
D = t
p
/T
t
p
10
0.1
1
10
100
Average Forward Current (A)
Reverse Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 5 - Typical Junction Capacitance
100
100
Instantaneous Forward Current (A)
T
A
= 150 °C
10
T
A
= 125 °C
Transient Thermal Impedance (°C/W)
Junction to Ambient
10
1
T
A
= 25 °C
1
0.1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Transient Thermal Impedance
Revision: 27-Nov-17
Document Number: 89043
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SS10P5, SS10P6
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMPC
(TO-277A)
0.187 (4.75)
0.175 (4.45)
K
0.016 (0.40)
0.006 (0.15)
Vishay General Semiconductor
0.262 (6.65)
0.250 (6.35)
0.242 (6.15)
0.238 (6.05)
2
1
0.171 (4.35)
0.167 (4.25)
0.146 (3.70)
0.134 (3.40)
0.087 (2.20)
0.075 (1.90)
0.047 (1.20)
0.039 (1.00)
Mounting Pad Layout
0.189 (4.80)
MIN.
0.189 (4.80)
0.173 (4.40)
0.155 (3.94)
NOM.
0.030 (0.75) NOM.
0.268
(6.80)
0.186 (4.72)
MIN.
0.049 (1.24)
0.037 (0.94)
0.084 (2.13) NOM.
0.053 (1.35)
0.041 (1.05)
Conform to JEDEC
®
TO-277A
0.050 (1.27)
MIN.
0.041
(1.04)
0.055 (1.40)
MIN.
Revision: 27-Nov-17
Document Number: 89043
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000