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SS23

Description
2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size297KB,2 Pages
ManufacturerSEMTECH_ELEC
Websitehttp://www.semtech.net.cn
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SS23 Overview

2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC

SS23 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMAJ, 2 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage30 V
Maximum average forward current2 A
Maximum non-repetitive peak forward current50 A
SS22 THRU SS210
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 100 V
Forward Current - 2 A
Features
• The plastic package carries UL Flammability Classi-
fication 94V-0
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency
• High forward surge current capability
• Built-in strain relief, ideal for automated placement
Mechanical Data
• Case: JEDEC DO-214AA molded plastic body
• Terminal: Leads solderable per MIL-STD-750,
Method 2026
• Polarity: Color band denotes cathode end
• Mounting Position: Any
Maximum Ratings and Electrical Characteristics
Ratings at 25
O
C ambient temperature unless otherwise specified. Single phase half-wave 60 Hz, resistive or
inductive load, for capacitive load current derate by 20%.
Parameter
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms Half Sine-wave
Superimposed on Rated Load (JEDEC method)
Maximum Instantaneous Forward Voltage at 2 A
Maximum DC Reverse Current at Rated
T
A
= 25
O
C
DC Blocking Voltage
T
A
= 100
O
C
Typical Junction Capacitance
Typical Thermal Resistance
2)
1)
Symbols
SS22 SS23 SS24 SS25 SS26 SS28 SS210
Unit
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
C
J
R
θJA
T
J
T
S
-65 to +125
0.55
20
14
20
30
21
30
40
28
40
50
35
50
2
50
0.7
0.5
20
220
75
-65 to +150
-65 to +150
10
180
O
60
42
60
80
56
80
100
70
100
V
V
V
A
A
0.85
V
mA
pF
C/W
O
Operating Junction Temperature Range
Storage Temperature Range
1)
C
C
O
2)
Measured at 1 MHz and applied reverse voltage of 4 VDC.
P.C.B mounted with 0.2 X 0.2"(5 X 5 mm) copper pad areas.
SEMTECH ELECTRONICS LTD.
(Subsidiary
of Semtech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 14/03/2006
C

SS23 Related Products

SS23 SS210 SS22 SS24 SS28 SS26
Description 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-214AC 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA RECTIFIER DIODE 2 A, 80 V, SILICON, RECTIFIER DIODE, DO-214AA 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-214AA
Number of terminals 2 2 - - 2 2
Number of components 1 1 - - 1 1
Processing package description Plastic, SMAJ, 2 PIN SMB, 2 PIN - - Plastic, SMB, 2 PIN SMB, 2 PIN
state DISCONTINUED DISCONTINUED - ACTIVE ACTIVE ACTIVE
packaging shape Rectangle Rectangle - - Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE - - SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes - - Yes Yes
Terminal form C BEND C BEND - - C BEND C BEND
Terminal location pair pair - - pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy - - Plastic/Epoxy Plastic/Epoxy
Craftsmanship SCHOTTKY SCHOTTKY - - SCHOTTKY SCHOTTKY
structure single single - - single single
Diode component materials silicon silicon - - silicon silicon
Diode type rectifier diode rectifier diode - rectifier diode rectifier diode rectifier diode
application GENERAL PURPOSE GENERAL PURPOSE - - EFFICIENCY GENERAL PURPOSE
Phase 1 1 - - 1 1
Maximum repetitive peak reverse voltage 30 V 100 V - - 80 V 60 V
Maximum average forward current 2 A 2 A - - 2 A 2 A
Maximum non-repetitive peak forward current 50 A 50 A - - 50 A 50 A

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