SS3H9 and SS3H10
New Product
Vishay Semiconductors
formerly General Semiconductor
High Voltage Surface Mount
Schottky Barrier Rectifiers
Cathode Band
Reverse Voltage
90 to 100V
Forward Current
3.0A
DO-214AB
(SMC)
0.126 (3.20)
0.114 (2.90)
0.245 (6.22)
0.220 (5.59)
Mounting Pad Layout
0.185 MAX.
(4.69 MAX.)
0.126 MIN.
(3.20 MIN.)
Dimensions in inches
and (millimeters)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
0.320 REF
0.103 (2.62)
0.079 (2.06)
0.060 (1.52)
0.030 (0.76)
0.320 (8.13)
0.305 (7.75)
0.008
(0.203)
Max.
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Low profile surface mount package
• Built-in strain relief
• Low power loss, high efficiency
• For use in low voltage high frequency inverters, free
wheeling, and polarity protection applications
• Guardring for overvoltage protection
• High temperature soldering guaranteed:
250°C/10 seconds at terminals
A
Mechanical Data
Case:
JEDEC DO-214AB molded plastic body
Terminals:
Solder plated, solderable per
MIL-STD750, Method 2026
Polarity:
Color band denotes cathode end
Weight:
0.007 oz., 0.25 g
Maximum Ratings and Thermal Characteristics
(T
Parameter
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at: T
L
= 115°C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Peak repetitive reverse surge current at t
p
= 2.0µs, 1KH
Z
Critical rate of rise of reverse voltage
Typical thermal resistance – junction to lead T
L
= 25°C
– junction to ambient
(2)
Operating junction and storage temperature range
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dv/dt
R
θJL
R
θJA
T
J
, T
STG
Symbol
= 25°C unless otherwise noted)
SS3H9
MS9
90
90
90
3.0
100
1.0
10,000
9.7
32
SS3H10
MS10
100
100
100
Unit
V
V
V
A
A
A
V/µs
°C/W
°C
–65 to +175
Electrical Characteristics
Maximum instantaneous
forward voltage at:
(1)
Maximum DC reverse current
at rated DC blocking voltage
(T
A
= 25°C unless otherwise noted)
I
F
= 3.0A, T
J
= 25°C
I
F
= 3.0A, T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
F
I
R
0.8
0.65
20
4
V
µA
mA
Notes:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) PCB mounted
Document Number 88752
18-Aug-04
www.vishay.com
1
SS3H9 and SS3H10
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
100
Fig. 2 -- Maximum Non-repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3ms single half sine-wave
(JEDEC Method)
4.0
3.5
Average Forward Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
80
60
40
20
10
25
50
75
100
125
150
175
200
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 3 – Typical Instantaneous Forward
Characteristics
100
1000
Fig. 4 – Typical Reverse
Characteristics
Instantaneous Reverse Current (µA)
100
10
1
0.1
0.01
0.001
20
T
J
= 25°C
T
J
= 150°C
T
J
= 125°C
T
J
= 100°C
Instantaneous Forward Current (A)
10
T
J
= 175°C
T
J
= 150°C
T
J
= 125°C
1
T
J
= 100°C
T
J
= 25°C
0.1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage, (%)
Fig. 5 – Typical Junction Capacitance
1000
100
Fig. 6 – Typical Transient Thermal
Impedance
Transient Thermal Impedance (°C/W)
Junction Capacitance (pF)
10
100
1
10
0.1
1
10
100
0.1
0.01
0.1
1
10
Reverse Voltage (V)
www.vishay.com
2
t -- Pulse Duration (sec)
Document Number 88752
18-Aug-04
Embedded System
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