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SS5P10

Description
5 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A
Categorysemiconductor    Discrete semiconductor   
File Size93KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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SS5P10 Overview

5 A, 100 V, SILICON, RECTIFIER DIODE, TO-277A

SS5P9, SS5P10
www.vishay.com
Vishay General Semiconductor
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
• Very low profile - typical height of 1.1 mm
Available
eSMP Series
K
®
• Ideal for automated placement
• Guardring for overvoltage protection
• Low forward voltage drop, low power losses
• High efficiency
• Low thermal resistance
1
2
• Meets MSL level 1, per
LF maximum peak of 260 °C
J-STD-020,
TO-277A (SMPC)
K
Cathode
Anode 1
Anode 2
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters, and
polarity protection application.
5.0 A
90 V, 100 V
150 A
0.649 V
4.5 μA
150 °C
TO-277A (SMPC)
Single
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 5.0 A
I
R
T
J
max.
Package
Diode variations
MECHANICAL DATA
Case:
TO-277A (SMPC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified (“_X” denotes revision code
e.g. A, B, .....)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy
at I
AS
= 2.0 A, T
J
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
AS
T
J
, T
STG
SYMBOL
SS5P9
S59
90
5.0
150
20
-55 to +150
SS5P10
S510
100
V
A
A
mJ
°C
UNIT
Revision: 01-Jul-15
Document Number: 88984
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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