Thick Film Hybrid IC
INCHANGE
STK730-010
Self-excitation Type Semi-Regulated
Switching Regulator
Features
﹒Power
MOSFET devices
﹒Ideal
for semi-regulated control switching supplies
﹒Error
detection circuit on-chip (40.5±0.5V
set reference voltage)
﹒Pin
compatible with all other devices in the same
series of devices with 110 to 280W power ratings
﹒Higher
oscillator frequency allows the use of
smaller pulse transformers
Package Dimensions
unit:mm
Applications
﹒CRT/CTV
power supplies
﹒Office
automation equipment power supplies
Block Diagram
Pin Functions
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(11)
(12)
Vref(40.5V typ) input
Error detection level
Ground
Drive voltage input
TR1 gate
Amplifier circuit control
OCP setting level input
TR1 source
TR1 source
TR1 drain
TR1 drain
Thick Film Hybrid IC
Specifications
INCHANGE
Maximum Ratings
at Ta=25℃, Tc=25℃ unless otherwise specified
Parameter
Operating substrate temperature
AC input voltage
Operating temperature
Storage temperature
Maximum output power
(TR1)
Drain current
Pulse drain current
Drain reverse current
Gate-source voltage
Allowable power dissipation
Chip junction temperature
Thermal resistance
(ZD1)
Allowable power dissipation
Chip junction temperature
Thermal resistance
P
ZD1
Tj(ZD1)max
θj-c(ZD1)
500
125
0.2
mW
℃
℃/mW
Symbol
T
C
max
V
AC
Topr
Tstg
Wo max
Specified test circuit V
O
=135V
Conditions
Recommended value is 105℃
Specified test circuit
Ratings
115
140
-10 to+85
-30 to+115
110
UNIT
℃
Vrms
℃
℃
W
I
D
I
D(Pulse)
I
DR
V
GSS
P
D
Tj max
θj-c
6
20
6
±30
78.1
150
1.6
A
A
A
V
W
℃
℃/W
Allowable operating ranges
at Ta=25℃
Parameter
Pin 4 input voltage
Oscillator frequency
Symbol
V
4
f
OSC
Conditions
Ratings
±8
to±24
20 to 120
UNIT
V
kHz
Operating characteristics
at Ta=25℃Tc=25℃
( unless otherwise specified,specified test circuits)
Parameter
Output voltage setting
Output voltage temperature coefficient
(TR1)
Drain-source breakdown voltage
Gate-source cutoff voltage
ON resistance
Input capacitance
(ZD1)
Zener voltage
V
Z
I
Z
=5mA
23.7
26.3
V
V
(BR)DSS
V
GS(off)
R
DS(on)
Ciss
I
D
=10mA,V
GS
=0V
I
D
=1mA,V
DS
=10V
I
D
=2.5A,V
GS
=10V
V
DS
=10V,V
GS
=0V,f=1MHz
500
2.0
1.4
800
3.0
1.8
V
V
Ω
pF
Symbol
Conditions
I
IN
=8mA
T
C
=0 to 105℃, I
IN
=8mA
min
40.0
Typ
40.5
7
max
41.0
UNIT
V
mV/℃
Thick Film Hybrid IC
Series organization
These devices form a series with varying output power ratings
Device
STK730-010
STK730-020
STK730-030
STK730-040
STK730-050
STK730-060
STK730-070
STK730-080
STJ730-090
900
-30 to
+115
+115
+150
500
V
DSS
[V]
Tstg
[℃]
Maximum ratings
T
C
max Tj max
[℃]
[℃]
I
D
[A]
6.0
8.0
10.0
12.0
15.0
3.0
5.0
6.0
8.0
170 to 264
85 to 132
INCHANGE
Operating characteristics
ON resistance
Input voltage Output power
[V]
[W]
[Ω]
110
145
180
210
280
110
180
210
280
1.4
0.8
0.7
0.55
0.3
5.0
3.0
2.0
1.2
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