STPS41L60C
Power Schottky rectifier
Features
■
■
■
■
A1
K
A2
K
Low forward voltage drop
Negligible switching losses
Low thermal resistance
Avalanche capability specified
K
Description
These dual center tap Schottky rectifiers are
suited for switch mode power supplies and high
frequency DC to DC converters.
Packaged in D
2
PAK, I
2
PAK and TO-220AB, this
device is intended for use in low voltage, high
frequency inverters, free-wheeling and polarity
protection applications.
Figure 1.
V
I
2 x I
O
I
F
V
RRM
V
R
V
AR
I
O
A2
A1
K
A1
K
A2
I
2
PAK
STPS41L60CR
K
TO-220AB
STPS41L60CT
Electrical characteristics
(a)
I
"Forward"
A2
A1
X
D
2
PAK
STPS41L60CG
X
V
I
R
VTo V
F(Io)
V
F
V
F(2xIo)
Table 1.
Device summary
I
F(AV)
V
RRM
T
j (max)
2 x 20 A
60 V
150 °C
0.58 V
"Reverse"
I
AR
V
F (max)
a. V
ARM
and I
ARM
must respect the reverse safe
operating area defined in
Figure 12
V
AR
and I
AR
are
pulse measurements (t
p
< 1 µs). V
R
, I
R
, V
RRM
and V
F
,
are static characteristics
July 2011
Doc ID 8616 Rev 6
1/9
www.st.com
9
Characteristics
STPS41L60C
1
Table 2.
Symbol
V
RRM
Characteristics
Absolute ratings (limiting values, per diode)
Parameter
Repetitive peak reverse voltage
Value
60
30
T
C
= 125 °C
δ
= 0.5
Per diode
Per device
20
40
220
9500
80
80
-65 to + 175
150
Unit
V
A
A
A
W
V
V
°C
°C
I
F(RMS)
Forward rms current
I
F(AV)
I
FSM
Average forward current
Surge non repetitive forward current
tp = 10 ms Sinusoidal
tp = 1 µs T
j
= 25 °C
t
p
< 1 µs, T
j
< 150 °C, I
AR
< 35 A
P
ARM(1)
Repetitive peak avalanche power
V
ARM (2)
Maximum repetitive peak avalanche voltage
V
ASM (2)
Maximum single pulse peak avalanche voltage t
p
< 1 µs, T
j
< 150 °C, I
AR
< 35 A
T
stg
T
j
Storage temperature range
Maximum operating junction temperature
(3)
1. For temperature or pulse time duration deratings, refer to
Figure 4
and
Figure 5.
More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2. Refer to
Figure 12
3.
dPtot
---------------
dTj
1
<
--------------------------
condition to avoid thermal runaway for a diode on its own heatsink
Rth
(
j
–
a
)
Table 3.
Symbol
R
th (j-c)
R
th (c)
Thermal resistances
Parameter
Junction to case
Coupling
Per diode
Total
Value
1.5
0.8
0.1
Unit
°
C/W
When the diodes 1 and 2 are used simultaneously :
Δ
Tj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Table 4.
Symbol
I
R (1)
Static electrical characteristics (per diode)
Parameter
Reverse leakage current
Tests conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
I
F
= 20 A
I
F
= 20 A
I
F
= 40A
I
F
= 40A
0.67
0.50
V
R
= V
RRM
Min.
Typ.
Max.
600
100
175
0.60
0.58
V
0.77
0.71
Unit
µA
mA
V
F (1)
Forward voltage drop
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
1. Pulse test: t
p
= 380 µs,
δ
< 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x I
F(AV)
+ 0.007 x I
F2(RMS)
2/9
Doc ID 8616 Rev 6
STPS41L60C
Characteristics
Figure 2.
P
F(av)
(W)
16
Conduction losses versus
average current
δ=0.5
δ=1
Figure 3.
I
F(av)
(A)
Average forward current versus
ambient temperature (
δ
= 0.5)
R
th(j-a)
=R
th(j-c)
22
20
18
16
14
12
14
12
δ=0.1
δ=0.2
10
8
δ=0.05
10
6
4
2
0
0
5
10
15
20
25
T
T
8
6
4
R
th(j-a)
=50 °C/W
δ
=tp/T
tp
I
F(av)
(A)
δ
=tp/T
tp
2
0
0
25
T
amb
(°C)
50
75
100
125
150
Figure 4.
Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
P
ARM
(tp)
P
ARM
(1 µs)
1
P
ARM
(Tj)
P
ARM
(25 °C)
1.2
1
0.1
0.8
0.6
0.4
0.2
0.01
0.001
0.01
0.1
1
t
p
(µs)
10
100
1000
T
j
(°C)
0
25
50
75
100
125
150
Figure 6.
Non repetitive surge peak forward
current versus overload duration
(maximum values)
Figure 7.
Relative variation of thermal
impedance junction to case versus
pulse duration
250
225
200
175
150
125
100
75
50
25
I
M
(A)
1.0
0.9
0.8
0.7
Tc=25 °C
Z
th(j-c)
/R
th(j-c)
Single pulse
0.6
0.5
Tc=75 °C
0.4
0.3
T
Tc=125 °C
I
M
t
0.2
δ
=0.5
t(s)
1.E-02
1.E-01
1.E+00
0.1
0.0
1.E-03
1.E-02
t
p
(s)
1.E-01
δ
=tp/T
tp
0
1.E-03
1.E+00
Doc ID 8616 Rev 6
3/9
Characteristics
STPS41L60C
Figure 8.
Reverse leakage current versus
reverse voltage applied
(typical values)
Tj=150°C
Figure 9.
Junction capacitance versus
reverse voltage applied
(typical values)
F=1 MHz
V
OSC
= 30 mV
Tj=25 °C
1.E+03
I
R
(mA)
C(nF)
10.0
1.E+02
Tj=125°C
Tj=100°C
1.E+01
Tj=75°C
1.0
1.E+00
Tj=50°C
1.E-01
Tj=25°C
V
R
(V)
1.E-02
0
5
10
15
20
25
30
35
40
45
50
55
60
0.1
1
V
R
(V)
10
100
Figure 10. Forward voltage drop versus
forward current
100
Figure 11. Thermal resistance junction to
ambient versus copper surface
under tab (STPS41L60CG only)
80
I
FM
(A)
Tj=125 °C
(Maximum values)
R
th(j-a)
(°C/W)
Epoxy printed circuit board
copper thickness = 35 µm
70
60
Tj=125 °C
(Typical values)
50
Tj=25 °C
(Maximum values)
10
40
30
20
10
V
FM
(V)
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
S(cm²)
0
0
5
10
15
20
25
30
35
40
Figure 12. Reverse safe operating area (t
p
< 1 µs, T
j
> 150 °C)
50
45
40
35
Operating area
IARM (A)
Forbidden area
30
25
20
60
65
70
75
80
85
90
VARM (V)
4/9
Doc ID 8616 Rev 6
STPS41L60C
Package information
2
Package information
●
●
●
Epoxy meets UL94,V0
Cooling method: by conduction (C)
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at:
www.st.com.
ECOPACK
®
is an ST trademark.
Figure 13. Package dimensions I
2
PAK
Dimensions
Ref.
A
Millimeters
Min.
Max.
4.60
2.69
0.93
1.17
1.17
0.60
1.36
9.35
2.70
10.4
13.6
3.78
1.40
Inches
Min.
0.173
0.098
0.028
0.044
0.044
0.018
0.048
0.352
0.094
0.394
0.516
0.137
0.050
Max.
0.181
0.106
0.037
0.046
0.046
0.024
0.054
0.368
0.106
0.409
0.535
0.149
0.055
A
E
L2
c2
4.40
2.49
0.70
1.14
1.14
0.45
1.23
8.95
2.40
10.0
13.1
3.48
1.27
A1
b
b1
D
b2
c
A1
L1
L
b1
c2
D
e
E
b
e
e1
c
L
L1
L2
Doc ID 8616 Rev 6
5/9
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