TC1304V
REV5_20070502
Low Noise and Medium Power GaAs FETs
FEATURES
!
!
!
!
!
!
!
!
!
!
Via holes for source grounding
Low Noise Figure: NF = 0.8dB Typical at 12 GHz
High Associated Gain: Ga = 13 dB Typical at 12 GHz
High Dynamic Range: 1 dB Compression Power P
-1
= 24.5 dBm at 12 GHz
Breakdown Voltage: BV
DGO
≥
9 V
Lg = 0.25
µm,
Wg = 600
µm
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
PHOTO ENLARGEMENT
DESCRIPTION
The TC1304V is the same as TC1304 expect via holes in the source pads for reducing the grounding inductance.
The device is processed with via-holes for high gain applications. It can be used in circuits up to 30 GHz and
suitable for low noise and medium power amplifier applications including a wide range of commercial and
military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated
for either thermo-compression or thermo-sonic wire bonding.
ELECTRICAL SPECIFICATIONS (T
A
=25
°
C)
Symbol
NF
G
a
P
1dB
G
L
I
DSS
g
m
V
P
BV
DGO
R
th
Conditions
Noise Figure at V
DS
= 4 V, I
DS
= 50 mA,
f
= 12GHz
= 12GHz
= 12GHz V
DS
= 6 V, I
DS
= 80 mA
11
23.5
9
MIN
TYP
0.8
13
24.5
10
180
200
-1.0*
9
12
48
MAX
1.0
UNIT
dB
dB
dBm
dB
mA
mS
Volts
Volts
°C/W
Associated Gain at V
DS
= 4 V, I
DS
= 50 mA,
f
Linear Power Gain,
f
Output Power at 1dB Gain Compression Point,
f
= 12GHz,V
DS
= 6 V, I
DS
= 80 mA
Saturated Drain-Source Current at V
DS
= 2 V, V
GS
= 0 V
Transconductance at V
DS
= 2 V, V
GS
= 0 V
Pinch-off Voltage at V
DS
= 2 V, I
D
= 1.2 mA
Drain-Gate Breakdown Voltage at I
DGO
= 0.3 mA
Thermal Resistance
Note:
* For the tight control of the pinch-off voltage . TC1304V’s are divided into 3 groups:
(1)
TC1304VP0710
: Vp = -0.7V to -1.0V (2)
TC1304VP0811
: Vp = -0.8V to -1.1V
(3)
TC1304VP0912
: Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
1/2
TC1304V
REV5_20070502
ABSOLUTE MAXIMUM RATINGS (T
A
=25
°
C)
Symbol
V
DS
V
GS
I
DS
I
GS
P
in
P
T
T
CH
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
7.0 V
-3.0 V
I
DSS
600
µ
A
24 dBm
800 mW
175
°C
- 65
°C
to +175
°C
CHIP DIMENSIONS
320
!
12
D
340
!
12
Units: Micrometers
Chip Thickness: 50
Gate Pad: 75 x 70
Drain Pad: 80 x 70
Source Pad: 75 x 80
S
G
S
CHIP HANDLING
DIE ATTACHMENT:
Conductive epoxy or eutectic die attach is recommended. For eutectic die attach can be
accomplished with Au-Sn (80%Au-20%Sn) perform in State Temperature: 290℃
±
5
℃
; Handling Tool :
Tweezers ; Time: less than 1min .
WIRE BONDING:
The recommended wire bond method is thermo-compression bonding with 0.7 or 1.0 mil
(0.018 or 0.025mm) gold wire. Stage Temperature: 220℃ to 250℃ ; Bond Tip Temperature : 150℃ ; Bond Force:
20 to 30 gms depending on size of wire and Bond Tip Temperature.
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment. Care should be exercised
during handling avoid damage to the devices. Electrostatic Discharge (ESD) precautions should be observed at all
stages of storage, handling, assembly, and testing. The static discharge must be less than 300V.
TRANSCOM, INC.,
90 Dasoong 7
th
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site:
www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
2/2
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