They are epitaxial-base PNP power transistors mounted in jedec TO-220 plastic package.
They are intended for use in medium power linear and switching applications.
NPN complements are TIP41-A-B-C
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
Value
-40
-60
-80
-100
-40
-60
-80
-100
Unit
V
CBO
Collector-Base Voltage
V
V
CEO
Collector-Emitter Voltage
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current
-6
A
I
CM
Collector Peak Current
-10
A
04/10/2012
COMSET SEMICONDUCTORS
1|4
SEMICONDUCTORS
PNP TIP42-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
Value
Unit
I
B
Base Current
-2
A
@ T
c
< 25°
P
C
Power Dissipation
@ T
a
< 25°
65
Watts
2
T
J
Junction Temperature
150
°C
-65 to +150
T
s
Storage Temperature range
THERMAL CHARACTERISTICS
Symbol
Ratings
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
Value
Unit
R
thJ-MB
From junction to mounting base
1.92
°C/W
R
thJ-A
From junction to ambient in free air
62.5
°C/W
04/10/2012
COMSET SEMICONDUCTORS
2|4
SEMICONDUCTORS
PNP TIP42-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
TIP42
TIP42A
TIP42B
TIP42C
Min
Typ
Mx
Unit
I
CES
Collector Cutoff Current
I
E
= 0, V
CE
= -V
CEO
-
-
-0.4
Ma
I
B
= 0, V
CE
= -30V
I
CEO
Collector Cutoff Current
I
B
= 0, V
CE
= -60V
-
-
-
-
-0.7
mA
-0.7
I
EBO
Emitter Cutoff Current
V
EB
= -5 V, I
C
= 0
-
-40
-60
-80
-100
-
-
-
-
-
-
-
-1
-
-
-
-
-1.5
mA
V
CEO
Collector-Emitter Breakdown
Voltage (*)
I
C
= -30 mA, I
B
= 0
V
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
I
C
= -6 A, I
B
= -600
mA
V
V
BE(on)
Base-Emitter Voltage (*)
I
C
= -6 A, V
CE
= -4 V
-
-
-2
V
V
CE
= -4 V, I
C
= -0.3
A
h
FE
DC Current Gain (*)
V
CE
= -4 V, I
C
= -3 A
30
-
-
-
15
-
75
h
fe
Small Signal Current Gain
V
CE
= -10 V, I
C
= -
0.5 A, f= 1kHz
20
-
-
-
f
T
Current Gain-Bandwidth
Product
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
04/10/2012
V
CE
= -10 V, I
C
= -
0.5 A
3
-
-
MHz
COMSET SEMICONDUCTORS
3|4
SEMICONDUCTORS
PNP TIP42-A-B-C
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
-
0,46
2,50
4,98
2.49
0,70
Max.
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
Pin 1 :
Pin 2 :
Pin 3 :
Case :
Base
Collector
Emitter
Collector
September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
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