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TP0202K_13

Description
P-Channel 30-V (D-S) MOSFET
File Size214KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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TP0202K_13 Overview

P-Channel 30-V (D-S) MOSFET

TP0202K
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V
DS
(V)
- 30
3.5 at V
GS
= - 4.5 V - 1.3 to - 3.0
- 240
R
DS(on)
(Ω)
V
GS(th)
(V)
I
D
(mA) Q
g
(Typ.)
- 385
1000
1.4 at V
GS
= - 10 V - 1.3 to - 3.0
Halogen-free According to IEC 61249-2-21
Available
• TrenchFET
®
Power MOSFET
• High-Side Switching
• Low On-Resistance: 1.2
Ω
(typ.)
• Low Threshold: - 2 V (typ.)
• Fast Swtiching Speed: 14 ns (typ.)
• Low Input Capacitance: 31 pF (typ.)
• 2000 V ESD Protection
TO-236
(SOT-23)
G
1
APPLICATIONS
• Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
• Battery Operated Systems
• Power Supply Converter Circuits
• Solid-State Relays
3
D
Marking Code: 2Kwll
2K = Part
Number
Code for TP0202K
w
= Week Code
ll
= Lot Traceability
S
2
BENEFITS
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven without Buffer
Top
View
Ordering Information:
TP0202K-T1-E3 (Lead (Pb)-free)
TP0202K-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
a
Pulsed Drain
Current
b
T
A
= 25 °C
T
A
= 85 °C
T
A
= 25 °C
T
A
= 85 °C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J,
T
stg
Limit
- 30
± 20
- 385
- 280
- 750
350
185
350
- 55 to 150
mW
°C/W
°C
mA
Unit
V
Power Dissipation
a
Maximum Junction-to-Ambient
a
Operating Junction and Storage Temperature Range
Notes:
a. Surface Mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71609
S-83053-Rev. E, 29-Dec-08
www.vishay.com
1

TP0202K_13 Related Products

TP0202K_13 TP0202K-T1
Description P-Channel 30-V (D-S) MOSFET P-Channel 30-V (D-S) MOSFET

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