EDI88512LPA25MBRP datasheet, PDF

EDI88512LPA25MBRP: DescriptionStandard SRAM, 512KX8, 25ns, CMOS, PDSO36,; Categorystorage storage; File Size299KB，7 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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EDI88512LPA25MBRP Overview

Standard SRAM, 512KX8, 25ns, CMOS, PDSO36,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	25 ns
I/O type	COMMON
JESD-30 code	R-PDSO-J36
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of terminals	36
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ36,.44
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.002 A
Minimum standby current	2 V
Maximum slew rate	0.18 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL

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