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2N5189

Description
Small Signal Bipolar Transistor, 2A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
CategoryDiscrete semiconductor    The transistor   
File Size1MB,36 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Small Signal Bipolar Transistor, 2A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,

2N5189 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-based maximum capacity12 pF
Collector-emitter maximum voltage35 V
ConfigurationSINGLE
Minimum DC current gain (hFE)35
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.8 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
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