TPCF8305
MOSFETs
Silicon P-Channel MOS (U-MOS)
TPCF8305
1. Applications
•
•
Notebook PCs
Mobile Handsets
2. Features
(1)
(2)
(3)
(4)
Small footprint due to a small and thin package
Low drain-source on-resistance: R
DS(ON)
= 47 mΩ (typ.) (V
GS
= -4.5 V)
Low leakage current: I
DSS
= -10
µA
(max) (V
DS
= -20 V)
Enhancement mode: V
th
= -0.5 to -1.2 V (V
DS
= -10 V, I
D
= -0.2 mA)
3. Packaging and Internal Circuit
1: Source1
2: Gate1
3: Source2
4: Gate2
5, 6: Drain2
7, 8: Drain1
VS-8
25
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation (single operation)
Power dissipation
(per device for dual operation)
Power dissipation (single operation)
Power dissipation
(per device for dual operation)
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(t = 5 s)
(t = 5 s)
(t = 5 s)
(t = 5 s)
(Note 1)
(Note 1)
(Note 2), (Note 4)
(Note 2), (Note 5)
(Note 3), (Note 4)
(Note 3), (Note 5)
(Note 6)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D(1)
P
D(2)
P
D(1)
P
D(2)
E
AS
I
AR
T
ch
T
stg
Rating
-20
±12
-4
-16
1.35
1.12
0.53
0.33
10.4
-4
150
-55 to 150
mJ
A
W
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-07-29
Rev.1.0
TPCF8305
5. Thermal Characteristics
Characteristics
Channel-to-ambient thermal resistance
(single operation)
Channel-to-ambient thermal resistance
(per device for dual operation)
Channel-to-ambient thermal resistance
(single operation)
Channel-to-ambient thermal resistance
(per device for dual operation)
(t = 5 s)
(t = 5 s)
(t = 5 s)
(t = 5 s)
(Note 2), (Note 4)
(Note 2), (Note 5)
(Note 3), (Note 4)
(Note 3), (Note 5)
Symbol
R
th(ch-a)(1)
R
th(ch-a)(2)
R
th(ch-a)(1)
R
th(ch-a)(2)
Max
92.5
111.6
235.8
378.7
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: Power dissipation and thermal resistance values per device with the other device being off (During single
operation, power is supplied to only one of the two devices.)
Note 5: Power dissipation and thermal resistance values per device for dual operation (During dual operation, power
is evenly supplied to both devices.)
Note 6: V
DD
= -16 V, T
ch
= 25 (initial), L = 0.5 mH, R
G
= 25
Ω,
I
AR
= -4 A
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2010-07-29
Rev.1.0
TPCF8305
6. Electrical Characteristics (T
a
= 25
unless otherwise specified)
25
6.1. Static Characteristics
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
(Note 7)
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
V
th
R
DS(ON)
Test Condition
V
GS
=
±12
V, V
DS
= 0 V
V
DS
= -20 V, V
GS
= 0 V
I
D
= -10 mA, V
GS
= 0 V
I
D
= -10 mA, V
GS
= 8 V
V
DS
= -10 V, I
D
= -0.2 mA
V
GS
= -1.8 V, I
D
= -1 A
V
GS
= -2.0 V, I
D
= -2 A
V
GS
= -2.5 V, I
D
= -2 A
V
GS
= -4.5 V, I
D
= -2 A
Min
-20
-12
-0.5
Typ.
125
95
65
47
Max
±0.1
-10
-1.2
265
160
83
58
mΩ
V
Unit
µA
Note 7: If a forward bias is applied between gate and source, this device enters V
(BR)DSX
mode. Note that the drain-
source breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
See Figure 6.2.1.
Test Condition
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
Min
Typ.
680
85
108
8.7
16
18
70
Max
ns
Unit
pF
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics
Characteristics
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
≈
-16 V, V
GS
= -5 V, I
D
= -4 A
Min
Typ.
9.2
1.8
2.0
Max
Unit
nC
6.4. Source-Drain Characteristics
Characteristics
Pulsed reverse drain current
Diode forward voltage
(Note 8)
Symbol
I
DRP
V
DSF
I
DR
= -4 A, V
GS
= 0 V
Test Condition
Min
Typ.
Max
-16
1.2
Unit
A
V
Note 8: Ensure that the channel temperature does not exceed 150.
3
2010-07-29
Rev.1.0
TPCF8305
7. Marking
Fig. 7.1 Marking
4
2010-07-29
Rev.1.0
TPCF8305
8. Characteristics Curves (Note)
Fig. 8.1 I
D
- V
DS
Fig. 8.2 I
D
- V
DS
Fig. 8.3 I
D
- V
GS
Fig. 8.4 V
DS
- V
GS
Fig. 8.5 R
DS(ON)
- I
D
Fig. 8.6 R
DS(ON)
- T
a
5
2010-07-29
Rev.1.0
京公网安备 11010802033920号
EEWORLD
