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ST333C08LEM1L

Description
Silicon Controlled Rectifier, 620000mA I(T), 800V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size185KB,10 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

ST333C08LEM1L Overview

Silicon Controlled Rectifier, 620000mA I(T), 800V V(DRM)

ST333C08LEM1L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
Maximum leakage current50 mA
On-state non-repetitive peak current11500 A
Maximum on-state voltage1.96 V
Maximum on-state current620000 A
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage800 V
surface mountNO
Trigger device typeSCR
Bulletin I25170 rev. B 04/00
ST333C..C SERIES
INVERTER GRADE THYRISTORS
Features
Metal case with ceramic insulator
International standard case TO-200AB (E-PUK)
All diffused design
Center amplifying gate
Guaranteed high dV/dt
Guaranteed high dI/dt
High surge current capability
Low thermal impedance
High speed performance
Hockey Puk Version
720A
Typical Applications
Inverters
Choppers
Induction heating
All types of force-commutated converters
case style TO-200AB (E-PUK)
Major Ratings and Characteristics
Parameters
I
T(AV)
@ T
hs
I
T(RMS)
@ T
hs
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
DRM
/V
RRM
t
q
range
T
J
ST333C..C
720
55
1435
25
11000
11500
605
553
400 to 800
10 to 30
- 40 to 125
Units
A
°C
A
°C
A
A
KA
2
s
KA
2
s
V
µs
°
C
Document Number: 93677
www.vishay.com
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