DATA SHEET
SEMICONDUCTOR
ULTRAFAST SWITCHING RECTIFIER
VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
UF100~UF1010
DO-41
Unit:inch(mm)
Flame Retardant
Epoxy
Molding
Copound
•
Class passivaeed Jumction In DO-41 Package
•
1.0
ampere operation at
TA=55
°C
with no thermal runaway
•
Exceeds environmental standards at terminals
•
Ultra fast
switching
for
high efficiency
•
High
temperature soldering: 260
°C
• Pbfree pr duc at available
:
o t
99%
Sn above meet RoHS environment
substance directive request
.205 (5.2)
.160 (4.1)
.107 (2.7)
.080 (2.0)
DIA.
1.0 (25.4)
MIN.
MECHANICAL DATA
• Case: Molded plastic,
DO-41
• Terminals:
Axial
leads, solderable per MIL-STD-202,
Method
208
• Polarity: Band denotes cathode
•
Mounting
Position:
Any
•
Weight: 0.013
ounce,
0.3
gram
.034 (.86)
.028 (.71)
DIA.
1.0 (25.4)
MIN.
MAXIMUM RATINGS AND
ELECTRICAL
CHARACTERISTICS
Ratings
at
25
°C
Jambient
temperature unless otherwise specified.
Single phase, half wave,
60
Hz, resistive or inductive load.
CHARACTERISTICS
Maximum
Recurrent Peak Reverse
V
oltage
Maximum
RMS
Voltage
Maximum DC Blocking
Voltage
Maximum Average
Forward
Rectified Current
Peak For ward
Surge Current
8.3ms single half sine- wave
super imposed on rated load
(JEDEC METHOD)
Maxi mum f
orward
Voltage
at
1.0A DC
Maxi mum DC
Reverse
Cur
rent
at Rated
DC Blocking
Voltage
@TJ =25
°C
@TJ =100
°C
VF
I
R
C
J
R
θJL
T
RR
TSTG
SYMBOL
UF100
50
35
50
UF101
100
70
100
UF102
200
140
200
UF104
400
280
400
1.0
UF106
600
420
600
UF108
800
560
800
UF1010
1000
700
1000
UNITS
V
V
V
A
@TL =75
°C
30.0
A
1.00
1.30
5
100
17.0
60.0
1.50
1.70
V
µA
µA
pF
°C/W
Maximum
Reverse Recovery Time (Note
1)
Typical Junction Resistance(Note 2)R JA
Reverse Recovery Time
I
F
=.5A, I
R
=1A, I
rr
=.25A
Operating and Storage Temperature Range
NOTES:
50
-55
to
+150
75
ns
°C
1.
Measured at
1 MHz
and applied reverse voltage of
4.0 VDC
2.
Thermal resistance from junction to ambient and from
junction
to lead length
0.375”(9.5mm)
P.C.B. mounted
http://www.yeashin.com
1
REV.02 20110725
RATING AND CHARACTERISTIC CURVES
UF100~UF1010
t
rr
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
-1.0
SET TIME
BASE FOR
50 ns/cm
1cm
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
10
UF100
TYPICAL
1
VERAGE FORWARD CURRENT, AMP
1.2
1.0
0.8
0.6
0.4
0.2
0
25
50
75
IFM, Apk
SINGLE PHASE
HALF WAVE 60Hz
RESISSTIVE OR
INDUCTIVE
LOAD .375" LEAD
LENGTHS
0.1
UF1010
TJ = 25
°C
0.01
0
.2
.4
.6
.8
1.0 1.2 1.4 1.6
100
125
150
175
FORWARD VOLTAGE-VFM(Vpk)
AMBIENT TEMPERATURE,
°C
Fig. 2-FORWARD CHARACTERISTICS
100
Fig. 3-FORWARD CURRENT DERATING CURVE
FORWARD SURGE CURRENT, AMPERES
35
30
25
20
15
10
5
JUNCTION CAPACITANCE, pF
TJ = 25
°C
f = 1.0MHz
Vsig = 50m Vp-p
10
1
0.1
1
10
100
.1
.5
1
2
5
10
20
50
100 200
500
1000
REVERSE VOLTAGE, VOLTS
NUMBER OF CYCLES AT 60Hz
Fig. 4-TYPICAL JUNCTION CAPACITANCE
Fig. 5-PEAK FORWARD SURGE CURRENT
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2
REV.02 20110725
Microcontroller MCU
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