DATA SHEET
SEMICONDUCTOR
ULT RAFAST SWITCHING RECTIFIER
VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes
FEATURES
•
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing
Flame Retardant Epoxy Molding Compound
•
Exceeds environmental standards of MIL-S-19500/228
•
Low power loss, high efficiency
•
Low forward voltage, high current capability
•
High surge capacity
•
Ultra Fast recovery times, high voltage
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
.161(4.1)
MAX
UF1000F~UF1008F
ITO-220AC
.185(4.8)
MAX
Unit:inch(mm)
.406(10.3)MAX
.134(3.4)DIA
.113(3.0)DIA
.272(6.9)
.248(6.3)
.130(3.3)
MAX
.112(2.85)
.100(2.55)
.606(15.4)
.583(14.8)
MECHANCALDATA
•
Case: ITO-220AC full molded plastic package
•
Terminals: Lead solderable per MIL-STD-202, Method 208
•
Polarity: As marked
•
Mounting Position: Any
•
Weight: 0.08 ounce, 2.26 gram
.114(2.9)
.098(2.5)
.032(0.8)
MAX
.055(1.4)
MAX
.035(0.9)
MAX
.543(13.8)
.512(13.0 )
.100(2.55)
.100(2.55)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
O
C•ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
TYPE NUMBER
Maximum Recurrent Peak Reverse V oltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectif ied
Cur rent . 375” (9.5mm) lead length @ T
C
=100
°C
Peak Forward Surge Current , 8.3ms single half sine
wave superimposed on rated load(J ECEC method)
Maximum Instantaneous Forward Voltage a t 10.0A
Maxi mum DC Reverse Current
at Rated DC Blocking Vol tage
@T
A
=25
°C
@T
A
=125
°C
50
80
15
-55 to +150
1.0
10.0
500
75
50
UF1000F UF1001F UF1002F UF1003F UF1004F UF1006F UF1008F
UNITS
50
35
50
100
70
100
200
140
200
300
210
300
10
400
280
400
600
420
600
800
560
800
V
V
V
A
150
1.3
1.7
A
V
µA
nS
pF
°C/W
°C
Maximum Reverse Recovery Time(Note 1)
Typi cal Junction capaci tance (Note 2)
Typi cal Junction Resi stance (Note 2) R JA
Operating and Storage Temperature Range T
J
,T
STG
NOTES:
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1A, Irr=0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC
3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B.mounted
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1
REV.02 20110725
RATING AND CHARACTERISTIC CURVES
UF1000F~UF1008F
t
rr
+0.5A
0
-0.25
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
-1.0
SET TIME
BASE FOR
50 ns/cm
1cm
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
PEAK FORWARD CURRENT,
AMPERES
20
12
8
4
0
0
50
100
150
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
16
1000
T
J
= 125
°C
100
10
CASE TEMPERATURE,
°C
Fig. 1-TYPICAL FORWARD CURRENT DERATING
CURVE
PEAK FORWARD CURRENT
AMPERES
150
120
90
60
30
TJ = 125
°C
8.3ms SINGLE HALF SINCE-
WAVE JEDEC METHOD
T
J
= 25
°C
1.0
0.1
20
40
60
80 100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE
Fig. 2-TYPICAL REVERSE CHARACTERISTICS
80
40
1
2
5
10
20
50
100
20
UF1000F
10
3.0
UF1008F
NUMBER OF CYCLES AT 60Hz
Fig. 3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
210
INSTANTANEOUS FORWARD CURRENT, (A)
1.0
0.3
CAPACITANCE, (pF)
200
160
120
80
40
0
1
2
5
20
50
100
200
500
UF1008F
UF1000F
0.1
0.03
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.8
REVERSE VOLTAGE, VOLTS
FORWARD VOLTAGE, VOLTS
Fig. 4-TYPICAL JUNCTION CAPACITANCE
Fig. 5-TYPICAL FORWARD CHARACTERISTICS
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2
REV.02 20110725
Embedded System
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