UNISONIC TECHNOLOGIES CO., LTD
UF1010E
N-CHANNEL POWER MOSFET
DESCRIPTION
Using high technology of UTC, UTC
UF1010E
has the
features such as: low R
DS(ON)
, fast switching, and low gate charge.
Like features of all power MOSFET devices’ features, UTC
UF1010E
can satisfy almost all the requirements of high efficient
device form customers.
Power MOSFET
FEATURES
* R
DS(ON)
<12 mΩ @V
GS
=10V
* Ultra low gate charge :130 nC
* Low C
RSS
= 140 pF(typ. )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability
* High ruggedness
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF1010EL-TA3-T
UF1010EG-TA3-T
UF1010EL-TF1-T
UF1010EG-TF1-T
UF1010EL-TF2-T
UF1010EG-TF2-T
Package
TO-220
TO-220F1
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
1 of 5
QW-R502-306.C
UF1010E
ABSOLUTE MAXIMUM RATINGS
(T
J
=25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
±20
V
Gate to Source Voltage
V
GSS
Continuous (V
GS
=10V)
I
D
84
Drain Current
A
Pulsed (Note 2)
I
DM
330
Avalanche Current (Note 2)
I
AR
50
A
Repetitive (Note 2)
E
AR
17
mJ
Avalanche Energy
Single Pulsed (Note3)
E
AS
1180
mJ
TO-220
200
Power Dissipation
P
D
W
(T
C
=25°C)
TO-220F1/ TO-220F2
54
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by T
J(MAX)
3. T
J
=25°C, L=260μH, R
G
=25Ω, I
AS
=50A
THERMAL DATA
PARAMETER
TO-220
Junction to Ambient
TO-220F1/ TO-220F2
TO-220
Junction to Case
TO-220F1/ TO-220F2
SYMBOL
θ
JA
θ
Jc
RATINGS
62
62.5
0.75
2.3
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R502-306.C
UF1010E
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
BV
DSS
TEST CONDITIONS
Power MOSFET
MIN
60
TYP MAX UNIT
V
25
μA
250
μA
±100 nA
0.064
V/°C
4.0
12
3210
690
140
130
28
44
12
78
48
53
4.5
7.5
1.3
84
330
73
220
110
330
V
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
nH
nH
V
A
A
ns
nC
V
GS
=0 V, I
D
=250
μA
V
DS
=60 V,V
GS
=0 V
Drain-Source Leakage Current
I
DSS
V
DS
=48 V,V
GS
=0 V,T
J
=150°C
Gate-Source Leakage Current
I
GSS
V
GS
=±20 V, V
DS
=0 V
Breakdown Voltage Temperature Coefficient
△BV
DSS
/△T
J
Reference to 25°C, I
D
=1mA
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250
μA
Static Drain-Source On Resistance(Note)
R
DS(ON)
V
GS
=10 V, I
D
=50 A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
DS
=25 V, V
GS
=0 V,f=1MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
I
D
=50A,V
DS
=48V,V
GS
=10V
Gate-to-Source Charge
Q
GS
Gate-to-Drain ("Miller") Charge
Q
GD
Turn ON Delay Time
t
D(ON)
Turn ON Rise Time
t
R
V
DD
=30V,I
D
=50A,R
G
=3.6Ω
V
GS
= 10V
Turn OFF Delay Time
t
D(OFF)
Turn OFF Fall Time
t
F
Internal Drain Inductance
L
D
Internal Source Inductance
L
S
Diode Forward Voltage
V
SD
T
J
= 25°C, I
S
= 50A,V
GS
= 0V
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Reverse Recovery Time
t
rr
T
J
=25°C,I
F
=50A,
di/dt=100A/μs
Reverse Recovery Charge
Q
RR
Note: Pulse width
≤
400μs; duty cycle
≤
2%.
2.0
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R502-306.C
UF1010E
TEST CIRCUITS AND WAVEFORMS
Power MOSFET
Switching Time Test Circuit
V
GS
V
DS
R
D
Switching Time Waveforms
V
DS
90％
R
G
DUT
+
V
DD
-
10％
V
GS=
10V
V
GS
t
d(on)
Pulse Width≤1µs Duty Cycle≤0.1％
Unclamped Inductive Test Circuit
V
GS
V
DS
L
15V
t
P
Driver
R
G
t
R
t
D(off)
t
F
Unclamped Inductive Waveforms
V
(BR)DSS
DUT
V
DD
+
-
0.01Ω
0V
V
GS
=10V
I
AS
t
P
I
AS
Gate Charge Test Circuit
V
G
2µF
12V
Basic Gate Charge Waveform
+
-
50KΩ
Q
G
10V
3µF
V
DS
+
-
Q
GS
Q
GD
V
GS
D.U.T
I
G(REF)
=3mA
I
G
I
D
Charge
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R502-306.C
UF1010E
TYPICAL CHARACTERISTICS
10
8
Drain Current, I
D
(A)
6
4
2
0
0
200
400
600
800 1000
Source to Drain Voltage,V
SD
(mV)
Drain Current vs. Source to Drain Voltage
Power MOSFET
Drain-Source On-State Resistance Characteristics
24
20
16
12
8
4
0
Drain Current,I
D
(A)
V
GS
=10V,
I
d
=20A
0
0.1
0.2
0.3
0.4
Drain to Source Voltage, V
DS
(V)
Drain Current,I
D
(µA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Drain Current,I
D
(µA)
5 of 5
QW-R502-306.C
Real-time operating system RTOS
京公网安备 11010802033920号
EEWORLD
