SEMICONDUCTOR
RoHS
4T Series
RoHS
TRIACs, 4A
Snubberless, Logic Level and Standard
MAIN FEATURES
2
SYMBOL
I
T(RMS)
V
DRM
/V
RRM
I
GT(Q1)
VALUE
4
600 to 1000
5 to 50
UNIT
A
V
mA
1
1
2
3
2
3
2
TO-251
(I-PAK)
(4TxxF)
TO-252
(D-PAK)
(4TxxG)
DESCRIPTION
The 4T
triac series is suitable for general purpose AC
switching. They can be used as an ON/OFF function in
applications such as static relays, heating regulation,
induction motor starting circuits... or for phase control
operation in light dimmers, motor speed controllers,...
The snubberless and logic level versions are specially
recommended for use on inductive loads, thanks to their
high commutation performances.
By using an internal ceramic pad, the 4T series provides
voltage insulated tab (rated at 2500V
RMS
) complying
with UL standards (File ref. :E320098)
A2
1
A1
A2
G
2
3
TO-220AB
(non-Insulated)
(4TxxA)
TO-220AB
(lnsulated)
(4TxxAI)
ITO-220AB
(4TxxAF)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current
(full
sine wave)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-251/TO-252/TO-220AB
TO-220AB insulated
F =50 Hz
F =60 Hz
I t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
2
VALUE
4
UNIT
A
T
c
= 105ºC
T
c
= 100ºC
t = 20 ms
t = 16.7 ms
35
38
6
T
j
=125ºC
T
j
=125ºC
50
4
1
- 40
to
+ 150
ºC
- 40
to
+ 125
A
A
2
s
A/µs
A
W
I
TSM
t p = 10 ms
F =100 Hz
T
p
=20 µs
T
j
=125ºC
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Page 1 of 7
SEMICONDUCTOR
RoHS
4T Series
RoHS
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
SNUBBERLESS and Logic level (3 quadrants)
4Txxxx
SYMBOL
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
dV/dt
(2)
V
D
= V
DRM
, R
L
= 3.3KΩ
T
j
= 125°C
I
T
= 200 mA
I
-
III
I
G
= 1.2 I
GT
II
V
D
= 67% V
DRM
, gate open ,T
j
= 125°C
(dV/dt)c = 0.1 V/µs
(dI/dt)c
(2)
(dV/dt)c = 10 V/µs
Without snubber
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
MIN.
MAX.
15
MIN.
20
1.8
0.9
-
TEST CONDITIONS
QUADRANT
TW
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
I
-
II
-
III
I
-
II
-
III
MAX.
MIN.
MAX.
10
10
1.3
0.2
15
25
30
40
2.7
2.0
-
35
50
mA
60
400
-
-
2.5
A/ms
V/µs
V
V
mA
MAX.
05
SW
10
CW
35
mA
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25 ºC unless otherwise specified)
Standard (4 quadrants)
4Txxxx
SYMBOL
TEST CONDITIONS
QUADRANT
I
-
II
-
III
V
D
= 12 V, R
L
= 30Ω
IV
ALL
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125°C
I
T
= 200 mA
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
, gate open, T
j
= 125°C
(dI/dt)c = 1.7 A/ms, T
j
= 125°C
I
-
III
-
IV
II
dV/d
t(2)
(dV/dt)c
(2)
MIN.
MIN.
ALL
MAX.
MAX.
5
10
15
5
0.5
10
10
20
5
1
T
5
MAX.
5
D
5
10
1.3
0.2
10
15
25
10
2
25
25
40
50
V/µs
5
mA
S
10
10
A
10
25
mA
V
V
mA
UNIT
I
GT(1)
V
GT
V
GD
I
H(2)
I
L
STATIC CHARACTERISTICS
SYMBOL
V
TM(2)
V
TO(2)
R
D(2)
I
DRM
I
RRM
I
TM
= 5.5 A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
D
=
V
DRM
V
R
=
V
RRM
TEST CONDITIONS
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
MAX.
T
j
= 125°C
1
mA
MAX.
MAX.
MAX.
VALUE
1.55
V
0.85
100
5
mΩ
µA
UNIT
Note
1:
Minimum l
GT
is guaranted at
5%
of l
GT
max.
Note
2:
For both polarities of A2 referenced to A1.
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Page 2 of 7
SEMICONDUCTOR
RoHS
4T Series
RoHS
THERMAL RESISTANCE
SYMBOL
R
th(j-c)
Junction to case
(AC)
S = 0.5 cm
2
R
th(j-a)
Junction to ambient
TO-220AB,TO-251, TO-252
TO-220AB Insulated, ITO-220AB
TO-252
TO-220AB Insulated, TO-220AB, ITO-220AB
TO-251
S
=
Copper surface under tab.
VALUE
2.6
4.0
70
60
100
°C/W
UNIT
°C/W
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
4TxxA-CW/4TxxAl-CW
4TxxA-S/4TxxAl-S
4TxxA-A/4TxxAl-A
4TxxA-SW/4TxxAl-SW
4TxxA-T/4TxxAI-T
4TxxA-D/4TxxAl-D
4TxxA-TW/4TxxAI-TW
4TxxF-CW
4TxxG-CW
4TxxF-SW
4TxxG-SW
4TxxF-TW
4TxxG-TW
4TxxF-T/D/S/A
4TxxG-T/D/S/A
4TxxAF-CW
4TxxAF-SW
4TxxAF-TW
4TxxAF-D
4TxxAF-A
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
800
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
1000
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
35
mA
10
mA
10
mA
10
mA
5
mA
5
mA
5
mA
35
mA
35
mA
10
mA
10
mA
5
mA
5
mA
5 /5/10/10
mA
5 /5/10/10
mA
35
mA
10
mA
5
mA
5
mA
10
mA
Snubberless
Standard
Standard
Logic level
Standard
Standard
Logic level
Snubberless
Snubberless
Logic level
Logic level
Logic level
Logic level
Standard
Standard
Snubberless
Logic level
Logic level
Standard
Standard
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
TO-220AB
I-PAK
D-PAK
I-PAK
D-PAK
I-PAK
D-PAK
I-PAK
D-PAK
ISOWAT TO-220AB
ISOWAT TO-220AB
ISOWAT TO-220AB
ISOWAT TO-220AB
ISOWAT TO-220AB
SENSITIVITY
TYPE
PACKAGE
ORDERING INFORMATION
ORDERING TYPE
4TxxA-yy
4TxxAI-yy
4TxxF-yy
4TxxG-yy
4TxxAF-yy
MARKING
4TxxA-yy
4TxxAI-yy
4TxxF-yy
4TxxG-yy
4TxxAF-yy
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-251(I-PAK)
TO-252(D-PAK)
ISOWAT TO-220AB
WEIGHT
2.0g
2.3g
0.40g
0.38g
2.5g
,
BASE Q TY
50
50
80
80
50
DELIVERY MODE
Tube
Tube
Tube
Tube
Tube
Note:
xx
=
voltage, yy
=
sensitivity
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Page 3 of 7
SEMICONDUCTOR
RoHS
4T Series
RoHS
ORDERING INFORMATION SCHEME
4
Current
4 = 4A
T 06
A - CW
Triac series
Voltage
06 = 600V
08 = 800V
10 = 1000V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
AF= TO-220F(ISOWAT TO-220AB, insulated)
F = TO-251 (I-PAK)
G = TO-252 (D-PAK)
IGT Sensitivity
T
= 5mA
Standard
D
= 5mA
Standard
S
= 10mA
Standard
A
= 10mA
Standard
CW = 35mA Snubberless
TW
= 5mA
Logic Level
SW
= 10mA
Logic Level
Fig.1 Maximum power dissipation versus RMS on-state
current
(full
cycle)
P
(W)
6
5
4
3
2
1
I T(RMS) (A)
Fig.2 RMS on-state current versus case temperature
(full
cycle)
I
T(RMS)
(A)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
ITO-220AB
TO-220AB ( insulated )
TO-220AB
/
DPAK
/
IPAK
0
0.0
T
C
(°C)
0
25
50
75
100
125
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Fig.3 RMS on-state current versus ambient
temperature (printed circuit board FR4,
copper thickness: 35µm)(full cycle)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
I
T(RMS)
(A)
DPAK
(S=0.5cm
2
)
Fig.4 Relative variation of thermal impedance
versus pulse duration.
K=[Z
th
/R
th
]
1E+0
R th(j-c)
ISOWATT220AB
Rth(j-a)
TO-220AB
/
DPAK
/
IPAK
1E-1
DPAK
/
IPAK
TO-220AB
/
TO-220AB
(insulated)
Tc
(°C)
1E-2
75
100
125
1E-2
1E-1
1E+0
tp
(
s
)
1E+1
1E+2
5E+2
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Page4 of 7
SEMICONDUCTOR
RoHS
4T Series
RoHS
Fig.6 Surge peak on-state current versus number
of cycles.
ITSM
(A)
40
Tj
=25°C
Fig.5 On-state characteristics (maximum values).
ITM
(A)
100
35
Tj
=125°C
30
25
10
T
j
max.
:
Vto
= 0.85
V
Rd
= 100
mW
VTM(V)
Non repetitive
T
j
initial=25°C
t=20ms
One cycle
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
1
Repetitive
Tc
=100°C
Number of cycles
1
10
100
1000
Fig.7 Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms.
and corresponding value of l
2
t.
lTSM (A), l
2
t(A
2
s)
1000
T
j
initial=25°C
Fig.8 Relative variation of gate trigger current,holding
current and latching current versus junction
temperature (typical values).
l
GT
,l
H
,l
L
[T
j
] / l
GT
,l
H
,l
L
[T
j
=25°C]
2.5
2.0
100
dI/dt limitation:
50A/µs
IGT
ITSM
1.5
IH
&
IL
1.0
10
I
2
t
0.5
T j (°C)
tp(ms)
1
0.01
0.0
-40
1.00
10.00
-20
0
20
40
60
80
100
120
140
0.10
Fig.9 Relative variation of critical rate of decrease
of main current versus (dV/dt)c (typical values).
(dI/dt)c [(dV/dt)c] /
Specified
(dI/dt)c
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
Fig.10 Relative variation of critical rate of decrease
of main current versus junction temperature
(dl/dt)c [T
j
] / (dl/dt)c [T
j
specified]
6
5
4
A
3
2
1
D
T
(dV/dt)c (V/µs)
S
T j (°C)
0
10.0
100.0
0
25
50
75
100
125
1.0
Fig.11 DPAK thermal resistance junction to
ambient versus copper surface under
tab (priented circuit board Fr4, copper
thickness:35 µm)
100
90
80
70
60
50
40
30
20
10
0
R
th(j-a)
°(C/W)
S(cm
2
)
0
4
8
12
16
20
24
28
32
36
40
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Page 5 of 7
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