1N4678...1N4717
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
Zener voltage specified at 50
m
A
Maximum delta V
Z
given from 10
m
A to 100
m
A
Very high stability
Low noise
Applications
94 9367
Voltage stabilization
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
l=4mm, T
L
=25
°
C
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4mm, T
L
=constant
Symbol
R
thJA
Value
300
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=100mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Document Number 85586
Rev. 2, 01-Apr-99
www.vishay.de
•
FaxBack +1-408-970-5600
1 (6)
1N4678...1N4717
Vishay Telefunken
1.) Toleranzing and voltage designation (V
Z
).
The type numbers shown have a standard tolerance of
±
5% on the nominal zener voltage.
2.) Maximum zener current ratings (I
ZM
).
Maximum zener current ratings are based on maximum zener voltage of the individual units.
3.) Reverse leakage current (I
R
).
Reverse leakage currents are guaranteed and measured at V
R
as shown on the table.
4.) Maximum voltage change (
D
V
Z
).
Voltage change is equal to the difference between V
Z
at 100
m
A and V
Z
at 10
m
A.
Characteristics
(T
j
= 25
_
C unless otherwise specified)
600
P
tot
– Total Power Dissipation ( mW )
500
400
300
200
100
0
0
95 9602
1.3
V
Ztn
– Relative Voltage Change
V
Ztn
=V
Zt
/V
Z
(25°C)
1.2
TK
VZ
=10
10
–4
/K
8
6
10
–4
/K
10
–4
/K
10
–4
/K
10
–4
/K
1.1
4
2
1.0
0.9
0.8
–60
0
–2 10
–4
/K
–4
10
–4
/K
40
80
120
160
200
95 9599
0
60
120
180
240
T
amb
– Ambient Temperature (
°C
)
T
j
– Junction Temperature (
°C
)
Figure 1. Total Power Dissipation vs.
Ambient Temperature
1000
– Voltage Change ( mV )
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
TK
VZ
– Temperature Coefficient of V
Z
( 10
–4
/K )
15
T
j
= 25°C
100
10
5
I
Z
=5mA
0
I
Z
=5mA
10
D
V
Z
1
0
95 9598
–5
0
10
20
30
40
50
V
Z
– Z-Voltage ( V )
5
10
15
20
25
V
Z
– Z-Voltage ( V )
95 9600
Figure 2. Typical Change of Working Voltage
under Operating Conditions at T
amb
=25
°
C
Figure 4. Temperature Coefficient of Vz vs.
Z–Voltage
Document Number 85586
Rev. 2, 01-Apr-99
www.vishay.de
•
FaxBack +1-408-970-5600
3 (6)
1N4678...1N4717
Vishay Telefunken
200
C
D
– Diode Capacitance ( pF )
50
P
tot
=500mW
T
amb
=25°C
V
R
= 2V
100
T
j
= 25°C
I
Z
– Z-Current ( mA )
25
95 9607
150
40
30
20
10
50
0
0
95 9601
0
5
10
15
20
15
20
25
30
35
V
Z
– Z-Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 5. Diode Capacitance vs. Z–Voltage
100
r
Z
– Differential Z-Resistance (
W
)
I
F
– Forward Current ( mA )
Figure 8. Z–Current vs. Z–Voltage
1000
10
T
j
= 25°C
1
I
Z
=1mA
100
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
5mA
10 10mA
1
0
95 9606
T
j
= 25°C
5
10
15
20
25
95 9605
V
F
– Forward Voltage ( V )
V
Z
– Z-Voltage ( V )
Figure 6. Forward Current vs. Forward Voltage
Figure 9. Differential Z–Resistance vs. Z–Voltage
100
I
Z
– Z-Current ( mA )
80
P
tot
=500mW
T
amb
=25°C
60
40
20
0
0
4
8
12
16
20
95 9604
V
Z
– Z-Voltage ( V )
Figure 7. Z–Current vs. Z–Voltage
www.vishay.de
•
FaxBack +1-408-970-5600
4 (6)
Document Number 85586
Rev. 2, 01-Apr-99
Embedded System
京公网安备 11010802033920号
EEWORLD
