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1N4764A

Description
NTE ELECTRONICS - 1N4764A - ZENER DIODE; 1W; 100V; DO-41
Categorysemiconductor    Discrete semiconductor   
File Size116KB,2 Pages
ManufacturerDACHANG
Websitehttp://www.dachang.com.cn
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NTE ELECTRONICS - 1N4764A - ZENER DIODE; 1W; 100V; DO-41

SIYU
R
DO41 Glass
1N47 Series
特征
Features
·反向漏电流小。
Low reverse leakage
·½纳击穿阻抗½。
Low zener impedance
·最大功率耗散1000mW。
Maximum power dissipation of 1000 mW
·高稳定性和可靠性。
High stability and high reliability
·引线和管½皆符合RoHS标准 。
Lead and body according with RoHS standard
机械数据
Mechanical Data
·封装: DO-41 玻璃封装
Case: DO-41 Glass Case
·极性: 色环端为负极
Polarity: Color band denotes cathode end
Unit:mm
·安装½½: 任意
Mounting Position: Any
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
参数
Parameter
功率消耗
Power Dissipation
工½结温
存储温度
Operating junction temperature
Storage temperature range
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
Pd
T
j
Ts
数值
Value
1000
175
-50 --- +150
单½
Unit
mW
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature
稳压范围
型号
Type
Zener Voltage
V
F
1.2V @I
F
= 200mA
反向特性
Reverese Current
动态电阻
Dynamic Resistance
V
Z
(V)
额定值
Nom.
最小值
MIN.
最大值
MAX.
测试条件
Test condition
I
R
(μA)
最大值
MAX.
100
100
50
10
10
10
10
10
10
10
10
10
10
5.0
5.0
5.0
5.0
5.0
测试条件
Test condition
rd(Ω)
最大值
MAX.
10
10
9.0
9.0
8.0
7.0
5.0
2.0
3.5
4.0
4.5
5.0
7.0
8.0
9.0
10
14
16
测试条件
Test condition
I
Z
(mA)
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
V
R
(V)
1.0
1.0
1.0
1.0
1.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
7.6
8.4
9.0
9.9
11.4
12.2
I
Z
(mA)
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
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1N4743A
1N4744A
1N4745A
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
大昌电子
DACHANG ELECTRONICS

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