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1N5062

Description
SILICON, RECTIFIER DIODE, DO-204AP
CategoryDiscrete semiconductor    diode   
File Size57KB,2 Pages
ManufacturerCentral Semiconductor
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1N5062 Overview

SILICON, RECTIFIER DIODE, DO-204AP

1N5062 Parametric

Parameter NameAttribute value
MakerCentral Semiconductor
package instructionE-XALF-W2
Contacts2
Manufacturer packaging codeGPR-1A
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Minimum breakdown voltage800 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JESD-30 codeE-XALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current40 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialUNSPECIFIED
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse current5 µA
Reverse test voltage800 V
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
1N5059 THRU 1N5062
GLASS PASSIVATED RECTIFIER
1.0 AMP, 200 THRU 800 VOLTS
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 1N5059
series types are silicon rectifiers manufactured in
a hermetically sealed glass passivated package
designed for general purpose applications where
high reliability is desired. Higher voltage devices
are available in the CPR1-010 series.
MARKING CODES: Full Part Number
GPR-1A CASE
MAXIMUM RATINGS:
(TA=25°C)
SYMBOL
Peak Reverse Voltage
DC Blocking Voltage
RMS Voltage
Average Forward Current(TA=75°C)
Peak Forward Surge Current
VRRM
VR
VRMS
IO
1N5059
200
200
140
1N5060 1N5061 1N5062 UNITS
400
400
280
1.0
50
-65 to +175
40
600
600
420
800
800
560
V
V
V
A
A
°C
°C/W
(8.3ms single half sine-wave on rated load) IFSM
Operating and Storage
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ
JA
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
IR
IR
IR
VF
CJ
VR=Rated VRRM
VR=Rated VRRM, TA=175°C (1N5059, 1N5060)
VR=Rated VRRM, TA=175°C (1N5061, 1N5062)
IF=1.0A
VR =4.0, f=1.0MHz
MAX
5.0
300
200
1.2
15
UNITS
μA
μA
μA
V
pF
R3 (21-June 2005)

1N5062 Related Products

1N5062 1N5061
Description SILICON, RECTIFIER DIODE, DO-204AP 1 A, SILICON, SIGNAL DIODE
Maker Central Semiconductor Central Semiconductor
package instruction E-XALF-W2 E-XALF-W2
Contacts 2 2
Manufacturer packaging code GPR-1A GPR-1A
Reach Compliance Code compliant compli
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY
application GENERAL PURPOSE GENERAL PURPOSE
Minimum breakdown voltage 800 V 600 V
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.2 V 1.2 V
JESD-30 code E-XALF-W2 E-XALF-W2
JESD-609 code e0 e0
Maximum non-repetitive peak forward current 40 A 40 A
Number of components 1 1
Phase 1 1
Number of terminals 2 2
Maximum operating temperature 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C
Maximum output current 1 A 1 A
Package body material UNSPECIFIED UNSPECIFIED
Package shape ELLIPTICAL ELLIPTICAL
Package form LONG FORM LONG FORM
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V 600 V
Maximum reverse current 5 µA 5 µA
Reverse test voltage 800 V 600 V
surface mount NO NO
Terminal surface TIN LEAD TIN LEAD
Terminal form WIRE WIRE
Terminal location AXIAL AXIAL

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