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1N5062GP

Description
1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC
CategoryDiscrete semiconductor    diode   
File Size73KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

1N5062GP Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC

1N5062GP Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
Maximum non-repetitive peak forward current50 A
Number of components1
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage800 V
surface mountNO
Base Number Matches1
1N5059GP thru 1N5062GP
Vishay General Semiconductor
Glass Passivated Junction Rectifier
FEATURES
SUPERECTIFIER
®
• Superectifier
application
structure
for
high
reliability
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
DO-204AC (DO-15)
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
1.0 A
200 V to 800 V
50 A
5.0 μA
1.2 V
175 °C
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
MECHANICAL DATA
Case:
DO-204AC, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 75 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Maximum full load reverse current, full cycle
average 0.375" (9.5 mm) lead length at
Operating junction and storage temperature range
Note
(1)
JEDEC registered values
T
A
= 25 °C
T
A
= 75 °C
SYMBOL 1N5059GP 1N5060GP 1N5061GP 1N5062GP
V
RRM (1)
V
RMS
V
DC (1)
I
F(AV) (1)
I
FSM (1)
I
R(AV) (1)
T
J
, T
STG
200
140
200
400
280
400
1.0
50
5.0
μA
150
- 65 to + 175
°C
600
420
600
800
560
800
UNIT
V
V
V
A
A
Document Number: 88513
Revision: 15-Mar-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

1N5062GP Related Products

1N5062GP 1N5059GP 1N5060GP FSHS10A12_15
Description 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AC Schottky Barrier Diode
Is it Rohs certified? incompatible incompatible incompatible -
Reach Compliance Code unknown unknown unknown -
ECCN code EAR99 EAR99 EAR99 -
Is Samacsys N N N -
Configuration SINGLE SINGLE SINGLE -
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE -
Maximum forward voltage (VF) 1.2 V 1.2 V 1.2 V -
Maximum non-repetitive peak forward current 50 A 50 A 50 A -
Number of components 1 1 1 -
Maximum operating temperature 175 °C 175 °C 175 °C -
Minimum operating temperature -65 °C -65 °C -65 °C -
Maximum output current 1 A 1 A 1 A -
Maximum repetitive peak reverse voltage 800 V 200 V 400 V -
surface mount NO NO NO -
Base Number Matches 1 1 1 -
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