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1N5227B

Description
SILICON, VOLTAGE REGULATOR DIODE, DO-35
Categorysemiconductor    Discrete semiconductor   
File Size62KB,3 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
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SILICON, VOLTAGE REGULATOR DIODE, DO-35

1N5227B Parametric

Parameter NameAttribute value
Number of terminals2
Processing package descriptionDO-35, 2 PIN
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
Terminal locationAXIAL
Packaging MaterialsGlass
Diode component materialssilicon
Diode typeZener diode
CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N5221B THRU 1N5272B
SILICON PLANAR ZENER DIODES
FEATURES
·Voltage
Range: 2.7V to 110V
·Double
siug type construction
DO-41
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
.034(0.9)
.028(0.7)
DIA.
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.33 grams
.107(2.7)
.080(2.0)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
Absolute Maximum Ratings
(T
a
=25°C)
SYMBOL
VALUE
1)
units
W
°C
Zener Current see Table
“Characterstics”
Power Dissipation at T
amb
=25°C
Junction Temperature
1)
P
tot
T
J
0.5
150
Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature.
Characteristics at T
amb
=25°C
SYMBOL
Min.
--
Typ.
--
Max.
1.2
units
V
Forward Voltage at I
F
=250mA
V
F
Valid provided that leads at a distance of 8 mm form case are kept at ambient temperature.
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