KI SEMICONDUCTOR
Features
•
•
•
•
•
1N5338B
THRU
1N5388B
Zener Voltage From 5.1V to
200V
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Lead Free Finish/RoHS Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Marking : Cathode band and type number
Halogen
free available upon request by adding suffix "-HF"
Operating Temperature: -55 C to +150 C
Storage Temperature: -55 C to +150 C
5 Watt DC Power Dissipation
Maximum Forward Voltage @ 1A: 1.2 Volts
Power Derating:
67
mW/ Above 75
Maximum thermal resistence: 25C/W from junction to ambient
5 Watt
Zener Diode
5.1
to
200
Volts
DO-15
Maximum Ratings:
Case: JEDEC DO-15.
Terminals: Solder plated , solderable per MIL-STD-750,
Method 2026.
Standard Packaging: 52mm tape
Mechanical
Data
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
MIN
.230
.104
.026
1.000
MM
MIN
5.80
2.60
.70
25.40
DIM
A
B
C
D
MAX
.300
.140
.034
---
MAX
7.60
3.60
.90
---
NOTE
Note:
1.
High Temperature Solder Exemption Applied, see EU Directive Annex 7.
KI SEMICONDUCTOR
1N5338B THRU 1N5388B
ELECTRICAL CHARACTERISTICS (T
A
=25
C
unless otherwise noted, V
F
=1.2 Max @ I
F
=1A for all types)
7
0.15
NOTE:
1. TOLERANCE AND VOLTAGE DESIGNATION - The JEDEC type numbers shown indicate a tolerance of+/-10% with
guaranteed limits on only Vz, I
R
, I
r
, and V
F
as shown in the electrical characteristics table. Units with guaranteed limits
on all seven parameters are indicated by suffix “B” for+/-5% tolerance.
2. ZENER VOLTAGE (Vz) AND IMPEDANCE (Z
ZT
& Z
ZK
) - Test conditions for Zener voltage and impedance are as
follows; Iz is applied 40+/-10 ms prior to reading. Mounting contacts are located from the inside edge of mounting
clips to the body of the diode(Ta=25
C)
KI SEMICONDUCTOR
o
1N5338B THRU 1N5388B
3. SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave
current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge
current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on
logarithmic paper. Examples of this, using the 6.8v ,
is
shown in Figure 6. Mounting
contact located as specified in Note 3. (T
A
=25
).
4. VOLTAGE REGULATION (Vz) - Test conditions for voltage regulation are as follows: Vz measurements are made
at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test currents are the
same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement is 40+/- 10 ms.
(T
A
=25C ). Mounting contact located as specified in Note2.
5. MAXIMUM REGULATOR CURRENT (I
ZM
) - The maximum current shown is based on the maximum voltage of a
5% type unit. Therefore, it applies only to the B-suffix device. The actual I
ZM
for any device may not exceed the
value of 5 watts divided by the actual Vz of the device. T
L
=75Cat maximum from the device body.
APPLICATION NOTE:
Since the actual voltage available from a given Zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, T
L
, should be determined from:
T
L
=
q
LA
P
D
+ T
A
For worst‐case design, using expected limits of I
Z
, limits
of P
D
and the extremes of T
J
(DT
J
) may be estimated.
Changes in voltage, V
Z
, can then be found from:
DV
=
q
VZ
DT
J
q
LA
is the lead‐to‐ambient thermal resistance and P
D
is the
power dissipation.
Junction Temperature, T
J
, may be found from:
T
J
= T
L
+
DT
JL
DT
JL
is the increase in junction temperature above the lead
temperature and may be found from Figure 4 for a train of
power pulses or from Figure 1 for dc power.
DT
JL
=
q
JL
P
D
q
VZ
, the Zener voltage temperature coefficient, is found
from Figures 2 and 3.
Under high power‐pulse operation, the Zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Data of Figure 4 should not be used to compute surge
capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots resulting in device
degradation should the limits of Figure 5 be exceeded.
KI SEMICONDUCTOR
RATING AND CHARACTERISTICS CURVES
1N5338B THRU 1N5388B
TEMPERATURE COEFFICIENTS
PD, MAXIUMU POWER DISSIPATION (WATTS)
θV
Z , TEMPERATURE COEFFICIENT
(mV/°C) @ I ZT
300
200
100
50
30
20
10
5
0
20 40 60
80 100 120 140 160 180 200 220
RANGE
8
6
4
2
0
0
20
40
60
80
100
120
VZ, ZENER VOLTAGE @IZT (VOLTS)
TL, LEAD TEMPERATURE
θ
JL (t, D), TRANSIENT THERMAL RESISTANCE
JUNCTION‐TO‐LEAD (
°
C/W)
Fig. 1-POWER TEMPERATURE DERATING CURVE
20
10
5
2
1
0.5
D=0
0.2
0.001
0.005 0.01
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.01
Fig. 2-TEMPERATURE COEFFICIENT-RANGE FOR UNITS
6 TO 51 VOLTS
P
PK
t
1
t
2
NOTE: BELOW 0.1 SECOND, THERMAL
NOTE:
RESPONSE CURVE IS APPLICABLE
NOTE:
TO ANY LEAD LENGTH (L).
0.05
0.1
DUTY CYCLE, D = t
1
/t
2
SINGLE PULSE
D
T
JL
=
q
JL
(t)P
PK
REPETITIVE PULSES
D
T
JL
=
q
JL
(t, D)P
PK
0.5
1
5
10
20
50
100
t, TIME (SECONDS)
Figure
3.
Typical Thermal Response
L, Lead Length = 3/8 Inch
JL, JUNCTION-TO -LEAD THERMAL
RESISTANCE (C/W)
IR, PEAK SURGE CURRENT (AMPS)
40
20
10
4
2
1
PW = 1000ms*
0.4
0.2
0.1
3
SINE / SQUARE WAVE PW = 100ms*
4
6
8 10
20
30 40
60 80 100
200
PW = 1ms*
PW = 8.3ms*
40
30
20
10
0
MOUNT ON 8.0mm
COPPER PADS TO
EACH TERMINAL
2
0
0.2
0.4
0.6
0.8
1
L, LEAD LENGTH TO HEAT SINK (INCH)
NOMINAL VZ(V)
Fig. 4-TYPICAL THERMAL RESISTANCE
Fig. 5-MAXIMUM NON-REPETITIVE SURGE
CURRENT VERSUS NOMINAL ZENER
VOLTAGE (SEE NOTE 3)
KI SEMICONDUCTOR
RATING AND CHARACTERISTICS CURVES
1N5338B THRU 1N5388B
ZENER VOLTAGE VERSUS ZENER CURRENT
(FIGURES 7,8)
I r , PEAK SURGE CURRENT (AMPS)
30
20
10
5
2
1
0.5
0.2
0.1
1
10
100
1000
PLOTTED FROM INFORMATION
GIVEN IN FIGURE
5
IZ, ZENER CURRENT (mA)
VZ = 6.8V
T
C
= 25
1000
100
10
1
0.1
T = 25
1
2
3
4
5
6
7
8
9
10
VZ, ZENER VOLTAGE (VOLTS)
Fig. 6-PEAK SURGE CURRENT VERSUS PULSE
WIDTH(SEE NOTE 3)
1000
Fig. 7-ZENER VOLTAGE VERSUS ZENER CURRENT
VZ = 6.8 THRU 10 VOLTS
IZ, ZENER CURRENT (mA)
T = 25
100
10
1
0.1
10
20
30
40
50
60
70
80
VZ, ZENER VOLTAGE (VOLTS)
Fig. 8-ZENER VOLTAGE VERSUS ZENER CURRENT
VZ = 11 THRU 51 VOLTS
*** Data of Figure 3 should not be used to compute surge capability. Surge limitations are given in Figure 5. They are
lower than would be expected by considering only junction temperature, as current crowding effects cause
temperatures to be extremely high in small spots resulting in device degradation should the limits of Figure. 5 be
exceeded
KI SEMICONDUCTOR
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