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1N5391G

Description
RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size36KB,1 Pages
ManufacturerCHONGQING PINGWEI ENTERPRISE CO.,LTD.
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1N5391G Overview

RECTIFIER DIODE, DO-15

CHONGQING PINGYANG ELECTRONICS CO.,LTD.
1N5391G THRU 1N5399G
TECHNICAL SPECIFICATIONS OF SILICON RECTIFIER
VOLTAGE:50-1000V
CURRENT:1.5A
FEATURES
·High
reliability
·Low
leakage
·Low
forward voltage drop
·High
current capability
DO-15
1.0(25.4)
MIN.
.300(7.6)
.230(5.8)
.034(0.9)
.028(0.7)
DIA.
MECHANICAL DATA
·Case:
Molded plastic
·Epoxy:
UL94V-0 rate flame retardant
·Lead:
MIL-STD- 202E, Method 208 guaranteed
·Polarity:Color
band denotes cathode end
·Mounting
position:
Any
·Weight:
0.38 grams
.140(3.6)
.104(2.6)
1.0(25.4)
MIN.
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
1N5391G 1N5392G 1N5393G1N5395G1N5397G 1N5398G1N5399G
units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward rectified Current
at T
L
=75°C
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC
method)
Maximum Instantaneous forward Voltage at 1.5A
DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T
A
=25°C
V
RRM
V
RMS
V
DC
I
o
I
FSM
V
F
50
35
50
100
70
100
200
140
200
400
280
400
1.5
50
1.1
5.0
500
30
20
50
600
420
600
800
560
800
1000
700
1000
V
V
V
A
A
V
@ T
A
=100°C
I
R
Maximum Full Load Reverse Current Average,
Full Cycle .375”(9.5mm) lead length at T
L
=75°C
C
J
Typical Junction Capacitance (Note)
R
θJA
Typical Thermal Resistance
Notes: Measured at 1MHz and applied reverse voltage of 4.0 volts
µA
pF
°C/W
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1N5391G Related Products

1N5391G 1N5397G 1N5398G 1N5399G 1N5392G 1N5393G 1N5395G
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