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1N5393S

Description
1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size172KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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1N5393S Overview

1.5 A, 200 V, SILICON, RECTIFIER DIODE, DO-41

1N5391S-1N5399S
1.5AMP. Silicon Rectifiers
DO-41
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
260
o
C/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Weight: 0.35 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) Lead Length
@T
A
= 75
o
C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 1.5A
Maximum DC Reverse Current
@ T
A
=25
o
C at Rated DC Blocking Voltage @
T
A
=125
o
C
Maximum Full Load Reverse Current, Full
Cycle Average .375”(9.5mm) Lead Length
o
@T
A
=75 C
Typical Junction Capacitance
Operating Temperature Range
( Note 1 )
Typical Thermal Resistance ( Note 2 )
Symbol
1N
1N
1N
1N
1N
1N
1N
5391S 5392S 5393S 5395S 5397S 5398S 5399S
Units
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
HT
IR
Cj
R
θJA
T
J
50
35
50
100
70
100
200
140
200
400
280
400
1.5
600
420
600
800
560
800
1000
700
1000
50
1.1
5.0
50
30
30
50
-65 to +125
-65 to +150
1.0
A
V
uA
uA
uA
pF
C/W
o
C
o
C
o
Storage Temperature Range
T
STG
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Notes:
2. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
http://www.luguang.cn
mail:lge@luguang.cn

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