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1N5400G

Description
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size510KB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
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1N5400G Overview

3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5400G Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingMATTE Tin
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typerectifier diode
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage50 V
Maximum average forward current3 A
Maximum non-repetitive peak forward current150 A
1N5400 THRU 1N5408
GENERAL PURPOSE RECTIFIERS
50V-1000V 3.0A
FEATURES :
*
*
*
*
*
Glass passivated chip
High current capability
High reliability
Low reverse current
Low forward voltage drop
GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 1.16 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load
For capacitive load derate current by 20%
IN
IN
SYMBOLS
5400G 5401G
Maximum Repetitive Peak Reverse Voltage
V
RRM
50
100
Maximum RMS Voltage
V
RMS
35
70
Maximum DC Blocking Voltage
V
DC
50
100
Maximum Average Forward Rectified Current
0.375 (9.5mm) lead length at T
A
=75
Peak Forward Surge Current
8.3mS single half sine wave superimposed on
rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 3.0A
Maximum DC Reverse Current
at rated DC blocking Voltage at
T
A
= 25
T
A
= 125
IN
5402G
200
140
200
IN
5404G
400
280
400
3.0
125
1.1
5.0
50
30
IN
5406G
600
420
600
IN
5407G
800
560
800
IN
5408G
1000
700
1000
UNIT
Volts
Volts
Volts
Amp
Amps
Volts
µA
µA
pF
/W
I
(AV)
I
FSM
V
F
I
R
I
R(AV)
C
J
R
θJA
T
J
T
STG
Maximum Full Load Reverse Current, full cycle
Average 0.375(9.5mm) lead length at T
L
=75
Typical Junction Capacitance (NOTE 1)
Typical Thermal Resistance (NOTE 2)
Operating Temperature Range
Storage Temperature Range
40
30
(-55 to +150)
(-55 to +150)
Notes:
1.Measured at 1.0MHz and applied reverse voltage of 4.0 Volits.
2. Thermal Resistance from Junction to Ambient at. 375 (9.5mm)lead length, P.C. board mounted.
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

1N5400G Related Products

1N5400G 1N5400 1N5401G 1N5402G 1N5404G 1N5406G 1N5407G 1N5408G
Description 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27
state ACTIVE ACTIVE - - - ACTIVE ACTIVE CONSULT MFR
Diode type rectifier diode rectifier diode - - - rectifier diode RECTIFIER DIODE rectifier diode

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