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1N5403

Description
3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size529KB,2 Pages
ManufacturerChenda
Websitehttp://www.szchenda.com
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1N5403 Overview

3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD

1N5400 THRU 1N5408
GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts
DO-201AD
Forward Current - 3.0 Amperes
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375
(9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.220 (5.6)
0.197(5.0)
DIA.
0.375(9.5)
0.285(7.2)
MECHANICAL DATA
1.0 (25.4)
MIN.
0.052 (1.3)
0.048 (1.2)
DIA.
Dimensions in inches and (millimeters)
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.04
ounce, 1.10 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
SYMBOLS
1N
1N
1N 1N
1N
1N 1N
1N
1N
5400 5401 5402 5403 5404 5405 5406 5407 5408
UNITS
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100 200 300 400 500
70 140 210 280 350
100 200 300 400 500
3.0
600 800 1000 VOLTS
420 560 700 VOLTS
600 800 1000 VOLTS
Amps
I
FSM
V
F
I
R
C
J
R
θ
JA
T
J
,
T
STG
150
1.2
5.0
100
30.0
20.0
-65 to +175
Amps
Volts
µ
A
pF
C/W
C
Note:1.Measured
at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length,P.C.B. mounted

1N5403 Related Products

1N5403 1N5400 1N5401 1N5402 1N5404 1N5405 1N5406 1N5407 1N5408
Description 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 500 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 600 V, SILICON, RECTIFIER DIODE 3 A, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,1KV V(RRM),DO-204AE
Number of terminals - 2 2 2 2 - 2 - -
Number of components - 1 1 1 1 - 1 - -
Processing package description - PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 GREEN, PLASTIC PACKAGE-2 - LEAD FREE, PLASTIC, CASE 267-05, 2 PIN - -
state - ACTIVE ACTIVE DISCONTINUED ACTIVE - DISCONTINUED - CONSULT MFR
packaging shape - round round round round - round - -
Package Size - LONG FORM LONG FORM LONG FORM LONG FORM - LONG FORM - -
Terminal form - Wire Wire Wire Wire - Wire - -
terminal coating - MATTE Tin tin tin lead PURE Tin - MATTE Tin - -
Terminal location - AXIAL AXIAL AXIAL AXIAL - AXIAL - -
Packaging Materials - Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy - Plastic/Epoxy - -
structure - single single single single - single - -
Shell connection - isolation isolation isolation isolation - isolation - -
Diode component materials - silicon silicon silicon silicon - silicon - -
Diode type - rectifier diode rectifier diode rectifier diode rectifier diode - rectifier diode - rectifier diode
application - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE EFFICIENCY - GENERAL PURPOSE - -
Phase - 1 1 1 1 - 1 - -
Maximum repetitive peak reverse voltage - 50 V 100 V 200 V 400 V - 600 V - -
Maximum average forward current - 3 A 3 A 3 A 3 A - 3 A - -
Maximum non-repetitive peak forward current - 200 A 200 A 200 A 200 A - 200 A - -
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