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M7S32

Description
COMPOSITE OUTLINE ASSY
File Size105KB,1 Pages
ManufacturerWinchester Electronics
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M7S32 Overview

COMPOSITE OUTLINE ASSY

June 2006 - This drawing became the property of Winchester Electronics Corporation, Wallingford, CT.

M7S32 Related Products

Description

Introduction

Features

Product Name: 3.0A SILICON RECTIFIERS 3.0 ampere silicon rectifier


Product model: 1N5408


product features:


Low forward voltage drop


High current capability


High reliability


High surge current capability



Mechanical data:


Cases:Molded plastic



Epoxy:UL 94V-0 rate flame retardant



Lead:Axial leads,solderable per MIL-STD-202, Method 208 guaranteed



Polarity:Color band denotes cathode end



High temperature soldering guaranteed;


250?C /10 seconds/.375”,(9.5mm)lead


Lengths at 5 lbs.,(2.3kg) tension



Weight: 1.2 grams



Maximum Ratings and Electrical Characteristics:


Rating at 25℃ ambient temperature unless otherwise specified.


Single phase, half wave, 60 Hz, resistive or inductive load.


For capacitive load, derate current by 20%



product data:


Maximum Repetitive Peak Reverse Voltage VRRM Maximum reverse peak voltage: 1000V



Maximum RMS Voltage VRMS Voltage effective value: 700 V



Maximum DC blocking Voltage VDC Maximum DC blocking voltage: 1000V



Maximum Average Forward Rectified Current .375”(9.5mm) Lead length @TA=75℃ IF(AV) Maximum forward current: 3.0 A



Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Super imposed on Rated Load IFSM Maximum forward surge current: 200 A



Maximum Instantaneous Forward Voltage @ 3.0A VF Maximum forward voltage drop: 1.0 V



Maximum Reverse Current at Rated @TA=25℃ IR Maximum reverse leakage current: 5.0μA


DC blocking voltage @TA= 100℃ IR Maximum reverse leakage current: 100μA



Typical Thermal Resistance (Note) RθJA Thermal resistance coefficient: 18 ℃/W



Operating Temperature Range TJ Operating Junction Temperature: -65 to +125 ℃



Storage Temperature Range TSTG Storage Temperature Range: -65 to +150 ℃



Package: DO-201AD


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